參數(shù)資料
型號(hào): GS816018T-250I
廠商: Electronic Theatre Controls, Inc.
元件分類: DRAM
英文描述: 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
中文描述: 1M×18,512k×32,512k×36 18M位同步突發(fā)靜態(tài)存儲(chǔ)器
文件頁(yè)數(shù): 24/28頁(yè)
文件大?。?/td> 810K
代理商: GS816018T-250I
Rev: 2.12 3/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
24/28
1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
TQFP Package Drawing
D
D
E1
E
P
b
e
c
L
L1
A2
A1
Y
θ
Notes:
1.
2.
All dimensions are in millimeters (mm).
Package width and length do not include mold protrusion.
Symbol
Description
Min.
Nom.
Max
A1
Standoff
0.05
0.10
0.15
A2
Body Thickness
1.35
1.40
1.45
b
Lead Width
0.20
0.30
0.40
c
Lead Thickness
0.09
0.20
D
Terminal Dimension
21.9
22.0
22.1
D1
Package Body
19.9
20.0
20.1
E
Terminal Dimension
15.9
16.0
16.1
E1
Package Body
13.9
14.0
14.1
e
Lead Pitch
0.65
L
Foot Length
0.45
0.60
0.75
L1
Lead Length
1.00
Y
Coplanarity
0.10
θ
Lead Angle
0
°
7
°
相關(guān)PDF資料
PDF描述
GS816032T-133 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816032T-133I 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816032T-150 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816032T-150I 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS816032T-166 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
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