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參數(shù)資料
| 型號： | GS816018T-250I |
| 廠商： | Electronic Theatre Controls, Inc. |
| 元件分類： | DRAM |
| 英文描述： | 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| 中文描述： | 1M×18，512k×32，512k×36 18M位同步突發(fā)靜態(tài)存儲器 |
| 文件頁數(shù)： | 14/28頁 |
| 文件大?。?/td> | 810K |
| 代理商： | GS816018T-250I |
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Rev: 2.12 3/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
14/28
1999, Giga Semiconductor, Inc.
Preliminary
GS816018/32/36T-250/225/200/166/150/133
Recommended Operating Temperatures
Capacitance
(T
A
= 25
o
C, f = 1 MH
Z
, V
DD
= 2.5 V)
Note: These parameters are sample tested.
Package Thermal Characteristics
Notes:
1.
Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temper-
ature air flow, board density, and PCB thermal resistance.
SCMI G-38-87
Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1
2.
3.
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Ambient Temperature (Commercial Range Versions)
T
A
T
A
0
25
70
°
C
°
C
2
Ambient Temperature (Industrial Range Versions)
–
40
25
85
2
Note:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
–
2 V > Vi < V
DDn
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
2.
Parameter
Symbol
Test conditions
Typ.
Max.
Unit
Input Capacitance
C
IN
C
I/O
V
IN
= 0 V
V
OUT
= 0 V
4
5
pF
Input/Output Capacitance
6
7
pF
Rating
Layer Board
Symbol
Max
Unit
Notes
Junction to Ambient (at 200 lfm)
single
R
Θ
JA
R
Θ
JA
R
Θ
JC
40
°
C/W
°
C/W
°
C/W
1,2
Junction to Ambient (at 200 lfm)
four
24
1,2
Junction to Case (TOP)
—
9
3
20% tKC
V
SS
–
2.0 V
50%
V
SS
V
IH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
V
DD
+ 2.0 V
50%
V
DD
V
IL
相關(guān)PDF資料 |
PDF描述 |
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| GS816032T-133 | 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS816032T-133I | 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS816032T-150 | 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS816032T-150I | 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS816032T-166 | 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS816032BGT-150 | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX32 7.5NS/3.8NS 100TQFP - Trays |
| GS816032BGT-150I | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 18MBIT 512KX32 7.5NS/3.8NS 100TQFP - Trays |
| GS816032BGT-150IT | 制造商:GSI Technology 功能描述:512K X 32 (16 MEG) SYNCH BURST, SCD - Tape and Reel |
| GS816032BGT-150IV | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 18MBIT 512KX32 7.5NS/3.8NS 100TQFP - Trays |
| GS816032BGT-150V | 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 1.8V/2.5V 18MBIT 512KX32 7.5NS/3.8NS 100TQFP - Trays |
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