參數(shù)資料
型號(hào): GS8151Z36
廠(chǎng)商: GSI TECHNOLOGY
英文描述: 16Mb Pipelined and Flow Through Synchronous NBT SRAM(16M位流水線(xiàn)式和流通型同步NBT靜態(tài)RAM)
中文描述: 16Mb的流水線(xiàn)和流量,通過(guò)同步唑的SRAM(1,600位流水線(xiàn)式和流通型同步唑靜態(tài)內(nèi)存)
文件頁(yè)數(shù): 9/27頁(yè)
文件大?。?/td> 683K
代理商: GS8151Z36
Rev: 1.01 1/2001
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
9/27
2000, Giga Semiconductor, Inc.
Preliminary
GS8151Z18/36T-225/200/180/166/150/133
Pipelined and Flow Through Read Write Control State Diagram
Deselect
New Read
New Write
Burst Read
Burst Write
W
R
B
R
B
W
D
D
B
B
W
R
D
B
W
R
D
D
Current State (n)
Next State (n+1)
Transition
Input Command Code
Key
Notes:
1. The Hold command (CKE Low) is not
shown because it prevents any state change.
2. W, R, B, and D represent input command
codes as indicated in the Synchronous Truth Table.
Clock (CK)
Command
Current State
Next State
n
n+1
n+2
n+3
Current State and Next State Definition for
Pipelined and Flow Through Read/Write Control State Diagram
W
R
相關(guān)PDF資料
PDF描述
GS815218 16Mb(1M x 18Bit)S/DCD Burst SRAM(16M位(1M x 18位)可選單/雙循環(huán)取消同步靜態(tài)RAM(帶2位脈沖地址計(jì)數(shù)器))
GS815236 16Mb(512K x 36Bit)S/DCD Sync Burst SRAM(16M位(512K x 36位)可選單/雙循環(huán)取消同步靜態(tài)RAM(帶2位脈沖地址計(jì)數(shù)器))
GS815272 16Mb(256K x 72Bit)S/DCD Sync Burst SRAM(16M位(256K x 72位)可選單/雙循環(huán)取消同步靜態(tài)RAM(帶2位脈沖地址計(jì)數(shù)器))
GS8152Z18 16Mb Pipelined and Flow Through Synchronous NBT SRAM(16M位流水線(xiàn)式和流通型同步NBT靜態(tài)RAM)
GS8152Z36 16Mb Pipelined and Flow Through Synchronous NBT SRAM(16M位流水線(xiàn)式和流通型同步NBT靜態(tài)RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS815V018AB-250 制造商:GSI Technology 功能描述:GS815V018AB-250 - Trays
GS815V018AB-250I 制造商:GSI Technology 功能描述:GS815V018AB-250I - Trays
GS815V018AB-300 制造商:GSI Technology 功能描述:GS815V018AB-300 - Trays
GS815V018AB-300I 制造商:GSI Technology 功能描述:GS815V018AB-300I - Trays
GS815V018AB-333 制造商:GSI Technology 功能描述:GS815V018AB-333 - Trays