參數(shù)資料
型號: GS815018
廠商: GSI TECHNOLOGY
英文描述: 16Mb(1M x 18Bit)Synchronous Burst SRAM(16M位(1M x 18位)同步靜態(tài)RAM(帶2位脈沖地址計數(shù)器))
中文描述: 16Mb的(100萬x 18位)同步突發(fā)靜態(tài)存儲器(1,600位(100萬× 18位)同步靜態(tài)隨機存儲器(帶2位脈沖地址計數(shù)器))
文件頁數(shù): 21/26頁
文件大?。?/td> 516K
代理商: GS815018
Rev: 1.02 11/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
21/26
2000, Giga Semiconductor, Inc.
Preliminary
GS815018/32/36T-225/200/180/166/150/133
Pipelined SCD Read - Write Cycle Timing
CK
ADSP
ADV
GW
BW
G
Q1
A
D1
A
Q2
A
Q2
Bb
Q2c
Q2
D
Single Read
Burst Read
tOE
tOHZ
tS tH
tS
tH
tH
tS tH
tS tH
tKH
DQ
A
–DQ
D
BW
A
–BW
D
tKL
tKC
tS
Single Write
ADSP is blocked by E inactive
tKQ
tS tH
Hi-Z
WR1
E
1
E
3
E
2
tS
tS tH
tS
E
1
masks ADSP
E
2
and E
3
only sampled with ADSP and ADSC
Deselected with E
3
tH
tH
RD1
WR1
RD2
tS tH
A
0
–An
ADSC
tS tH
ADSC initiated read
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GS8150E32 16Mb(512K x 32Bit)Synchronous Burst SRAM(16M位(512K x 32位)同步靜態(tài)RAM(帶2位脈沖地址計數(shù)器))
GS8150E36 16Mb(512K x 36Bit)Synchronous Burst SRAM(16M位(512K x 36位)同步靜態(tài)RAM(帶2位脈沖地址計數(shù)器))
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