參數(shù)資料
型號: GS74116A
廠商: Electronic Theatre Controls, Inc.
元件分類: DRAM
英文描述: 256K x 16 4Mb Asynchronous SRAM
中文描述: 256K × 16 4Mb的異步SRAM
文件頁數(shù): 7/14頁
文件大?。?/td> 433K
代理商: GS74116A
Rev: 1.03 10/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
7/14
2001, Giga Semiconductor, Inc.
GS74116ATP/J/X
Read Cycle 2: WE = V
IH
* These parameters are sampled and are not 100% tested.
Write Cycle
Parameter
Symbol
-7
-8
-10
-12
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Write cycle time
tWC
7
8
10
12
ns
Address valid to end of write
tAW
5
5.5
7
8
ns
Chip enable to end of write
tCW
5
5.5
7
8
ns
Byte enable to end of write
tBW
5
5.5
7
8
ns
Data set up time
tDW
3.5
4
4.5
6
ns
Data hold time
tDH
0
0
0
0
ns
Write pulse width
tWP
5
5.5
7
8
ns
Address set up time
tAS
0
0
0
0
ns
Write recovery time (WE)
tWR
0
0
0
0
ns
Write recovery time (CE)
tWR1
0
0
0
0
ns
Output Low Z from end of write
tWLZ
*
3
3
3
3
ns
Write to output in High Z
tWHZ
*
3
3.5
4
5
ns
tAA
tRC
Address
tAC
tLZ
tAB
tBLZ
tOE
tOLZ
CE
UB, LB
OE
Data Out
tHZ
tBHZ
tOHZ
Data valid
High impedance
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GS74116AJ-10 256K x 16 4Mb Asynchronous SRAM
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GS74116AJ-10IT 256K x 16 4Mb Asynchronous SRAM
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參數(shù)描述
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