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參數(shù)資料
| 型號： | GS74116A |
| 廠商： | Electronic Theatre Controls, Inc. |
| 元件分類： | DRAM |
| 英文描述： | 256K x 16 4Mb Asynchronous SRAM |
| 中文描述： | 256K × 16 4Mb的異步SRAM |
| 文件頁數(shù)： | 6/14頁 |
| 文件大?。?/td> | 433K |
| 代理商： | GS74116A |
Rev: 1.03 10/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
6/14
2001, Giga Semiconductor, Inc.
GS74116ATP/J/X
AC Characteristics
* These parameters are sampled and are not 100% tested.
Read Cycle 1: CE = OE = V
IL
, WE = V
IH
, UB and, or LB = V
IL
Read Cycle
Parameter
Symbol
-7
-8
-10
-12
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Read cycle time
t
RC
7
—
8
—
10
—
12
—
ns
Address access time
t
AA
—
7
—
8
—
10
—
12
ns
Chip enable access time (CE)
t
AC
—
7
—
8
—
10
—
12
ns
Byte enable access time (UB, LB)
t
AB
—
3
—
3.5
—
4
—
5
ns
Output enable to output valid (OE)
t
OE
—
3
—
3.5
—
4
—
5
ns
Output hold from address change
t
OH
3
—
3
—
3
—
3
—
ns
Chip enable to output in low Z (CE)
t
LZ
*
3
—
3
—
3
—
3
—
ns
Output enable to output in low Z (OE)
t
OLZ
*
0
—
0
—
0
—
0
—
ns
Byte enable to output in low Z (UB, LB)
t
BLZ
*
0
—
0
—
0
—
0
—
ns
Chip disable to output in High Z (CE)
t
HZ
*
—
3.5
—
4
—
5
—
6
ns
Output disable to output in High Z (OE)
t
OHZ
*
—
3
—
3.5
—
4
—
5
ns
Byte disable to output in High Z (UB, LB)
t
BHZ
*
—
3
—
3.5
—
4
—
5
ns
t
AA
t
OH
t
RC
Address
Data Out
Previous Data
Data valid
相關PDF資料 |
PDF描述 |
|---|---|
| GS74116AJ-10 | 256K x 16 4Mb Asynchronous SRAM |
| GS74116AJ-10I | 256K x 16 4Mb Asynchronous SRAM |
| GS74116AJ-10IT | 256K x 16 4Mb Asynchronous SRAM |
| GS74116AJ-10T | 256K x 16 4Mb Asynchronous SRAM |
| GS74116AJ-12 | 256K x 16 4Mb Asynchronous SRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| GS74116AGP-10 | 制造商:GSI Technology 功能描述:SRAM ASYNC SGL 3.3V 4MBIT 256KX16 10NS 44TSOP-II - Trays |
| GS74116AGP-10E | 制造商:GSI Technology 功能描述:GS74116AGP-10E - Trays |
| GS74116AGP-10I | 制造商:GSI Technology 功能描述:SRAM ASYNC SGL 3.3V 4MBIT 256KX16 10NS 44TSOP-II - Trays 制造商:GSI Technology 功能描述:IC 4MB ASYNCH SRAM 256K X 16 10NS 制造商:GSI Technology 功能描述:IC, 4MB ASYNCH SRAM 256K X 16, 10NS 制造商:GSI Technology 功能描述:IC, 4MB ASYNCH SRAM 256K X 16, 10NS; Memory Size:4Mbit; Memory Configuration:256K x 16; Supply Voltage Min:3V; Supply Voltage Max:3.6V; Memory Case Style:TSOP-2; No. of Pins:44; Access Time:10ns; Operating Temperature Min:-40C; ;RoHS Compliant: Yes |
| GS74116AGP-10T | 制造商:GSI Technology 功能描述:SRAM ASYNC SGL 3.3V 4MBIT 256KX16 10NS 44TSOP-II - Tape and Reel |
| GS74116AGP-12 | 制造商:GSI Technology 功能描述:SRAM ASYNC SGL 3.3V 4MBIT 256KX16 12NS 44TSOP-II - Trays 制造商:GSI Technology 功能描述:IC 4MB ASYNCH SRAM 512K X 16 12NS 制造商:GSI Technology 功能描述:IC, 4MB ASYNCH SRAM 512K X 16, 12NS |
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