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參數(shù)資料
| 型號(hào)： | GS152B |
| 廠商： | GTM CORPORATION |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | P溝道增強(qiáng)型功率MOSFET |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 302K |
| 代理商： | GS152B |
GS152B
Page: 2/4
ISSUED DATE :2006/02/06
REVISED DATE :
Electrical Characteristics (Tj = 25 :::: unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
-20
-
V
VGS=0, ID=-250uA
Breakdown Voltage Temperature Coefficient
BVDSS /
Tj
-
-0.1
-
V/ :
Reference to 25 , I
:
D=-1mA
Gate Threshold Voltage
VGS(th)
-0.5
-
-1.2
V
VDS=VGS, ID=-1mA
Forward Transconductance
gfs
-
1.5
-
S
VDS=-10V, ID=-0.4A
Gate-Source Leakage Current
IGSS
-
±100
nA
VGS= ±12V
Drain-Source Leakage Current(Tj=25 )
:
IDSS
-
-10
uA
VDS=-20V, VGS=0
-
300
VGS=-4.5V, ID=-0.4A
Static Drain-Source On-Resistance
RDS(ON)
-
500
m
VGS=-2.5V, ID=-0.4A
Total Gate Charge2
Qg
-
3.2
-
Gate-Source Charge
Qgs
-
0.7
-
Gate-Drain (“Miller”) Change
Qgd
-
0.8
-
nC
ID=-0.7A
VDS=-10V
VGS=-4.5V
Turn-on Delay Time2
Td(on)
-
9.8
-
Rise Time
Tr
-
10.8
-
Turn-off Delay Time
Td(off)
-
79.1
-
Fall Time
Tf
-
41.3
-
ns
VDS=-10V
ID=-0.4A
VGS=-4.5V
RG=6
Input Capacitance
Ciss
-
290
-
Output Capacitance
Coss
-
60
-
Reverse Transfer Capacitance
Crss
-
45
-
Pf
VGS=0V
VDS=-20V
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward On Voltage2
VSD
-
-1.1
V
IS=-0.7A, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on FR4 board, t
10sec.
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