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參數(shù)資料
| 型號(hào)： | GS152B |
| 廠商： | GTM CORPORATION |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | P溝道增強(qiáng)型功率MOSFET |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 302K |
| 代理商： | GS152B |
GS152B
Page: 1/4
ISSUED DATE :2006/02/06
REVISED DATE :
G
G S
S 115522B
B
P
P -- C
C H
H A
A N
N N
N E
E L
L E
E N
N H
H A
A N
N C
C E
E M
M E
E N
N T
T M
M O
O D
D E
E P
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O W
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E R
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Description
The GS152B provides the designer with the best combination of fast switching, low on-resistance and
cost-effectiveness.
The GS152B is universally preferred for all commercial-industrial surface mount applications and suited for low
voltage applications such as DC/DC converters.
Features
*Low On-State Resistance:0.3 (max)
*Ultra High Speed Switching
Applications
*Notebook PCs
*Cellular and portable phones
*On-board power supplies
*Li-ion battery System
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
0.80
1.10
L1
0.42 REF.
A1
0
0.10
L
0.15
0.35
A2
0.80
1.00
b
0.25
0.40
D
1.80
2.20
c
0.10
0.25
E
1.15
1.35
e
0.65 REF.
HE
1.80
2.40
Q1
0.15 BSC.
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±12
V
Continuous Drain Current3
ID @TA=25 :
-0.7
A
Pulsed Drain Current1,2
IDM
-2.8
A
Power Dissipation
PD @TA=25 :
0.35
W
Linear Derating Factor
0.0028
W/ :
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
:
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance Junction-ambient3 Max.
Rthj-a
360
: /W
BVDSS
-20V
RDS(ON)
300m
ID
-0.7A
Pb Free Plating Product
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