參數(shù)資料
型號(hào): GS138K
廠商: GTM CORPORATION
英文描述: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述: N溝道增強(qiáng)型功率MOSFET
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 337K
代理商: GS138K
GS138K
Page: 2/4
ISSUED DATE :2005/10/11
REVISED DATE :
Electrical Characteristics(Tj = 25
Unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
50
-
V
VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient
BVDSS /
Tj
-
0.06
-
V/ :
Reference to 25 : , ID=1mA
Gate Threshold Voltage
VGS(th)
0.5
-
2.0
V
VDS=VGS, ID=1mA
Forward Transconductance
gfs
-
600
-
mS
VDS=10V, ID=600mA
Gate-Source Leakage Current
IGSS
-
±10
uA
VGS= ±20V
Drain-Source Leakage Current(Tj=25 : )
-
1
uA
VDS=50V, VGS=0
Drain-Source Leakage Current(Tj=70 : )
IDSS
-
100
uA
VDS=40V, VGS=0
-
2
VGS=10V, ID=500mA
Static Drain-Source On-Resistance
RDS(ON)
-
4
VGS=4.5V, ID=400mA
Total Gate Charge2
Qg
-
1
1.6
Gate-Source Charge
Qgs
-
0.5
-
Gate-Drain (“Miller”) Change
Qgd
-
0.5
-
nC
ID=600mA
VDS=50V
VGS=4.5V
Turn-on Delay Time2
Td(on)
-
12
-
Rise Time
Tr
-
10
-
Turn-off Delay Time
Td(off)
-
56
-
Fall Time
Tf
-
29
-
ns
VDS=30V
ID=600mA
VGS=10V
RG=3.3
RD=52
Input Capacitance
Ciss
-
32
50
Output Capacitance
Coss
-
8
-
Reverse Transfer Capacitance
Crss
-
6
-
pF
VGS=0V
VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward On Voltage2
VSD
-
1.2
V
IS=200mA, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on FR4 board, t 10sec.
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GS152B P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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