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參數(shù)資料
| 型號： | GP801DCM18 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | B Series/ Female Solder |
| 中文描述： | 800 A, 1800 V, N-CHANNEL IGBT |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 158K |
| 代理商： | GP801DCM18 |
GP801DCM18
4/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Units
ns
ns
mJ
ns
ns
mJ
μ
C
A
mJ
Max.
1200
350
600
400
300
400
240
-
-
Typ.
1000
250
500
300
200
300
180
450
120
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 800A
V
GE
=
±
15V
V
CE
= 900V
R
G(ON)
= R
G(OFF)
= 2.2
L ~ 100nH
I
F
= 800A, V
R
= 50% V
CES
,
dI
F
/dt = 3500A/
μ
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
T
case
= 125C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
μ
C
A
mJ
Max.
1400
400
700
550
350
550
400
-
-
Typ.
1200
300
600
400
250
450
300
525
190
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 800A
V
GE
=
±
15V
V
CE
= 900V
R
G(ON)
= R
G(OFF)
= 2.2
L ~ 100nH
I
F
= 800A, V
R
= 50% V
CES
,
dI
F
/dt = 3000A/
μ
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
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PDF描述 |
|---|---|
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| GP801FSM18 | Hi-Reliability Single Switch Low VCE(SAT) IGBT Module |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GP801DCN18 | 制造商:n/a 功能描述:Power Module |
| GP801DCS18 | 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Chopper Switch Low VCESAT IGBT Module |
| GP801DDM18 | 制造商:n/a 功能描述:Power Module |
| GP801DDS18 | 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Dual Switch Low VCE(SAT) IGBT Module |
| GP801FSM18 | 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Hi-Reliability Single Switch Low VCE(SAT) IGBT Module |
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