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參數(shù)資料
| 型號： | GP1S036HEZ |
| 英文描述： | Photointerrupter |
| 中文描述： | 光電斷路器 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 69K |
| 代理商： | GP1S036HEZ |
GP1S036HEZ
I
Supplement
I
Detecting Angle Characteristics
θ
I
C1
OFF
OFF
*5
I
C2
I
Electro-optical Characteristics
Parameter
Forward voltage
Reverse current
Collector dark current
Output
Collector
current
Leak current
Symbol
V
F
I
R
I
CEO
I
C
I
LEAK
t
r
t
f
Unit
V
μ
A
nA
μ
A
μ
A
Input
V
R
=
3V
V
CE
=
20V
V
CE
=
5V, I
F
=
5mA
V
CE
=
5V, I
F
=
5mA
V
CE
=
5V, I
C
=
100
μ
A
R
L
=
1k
I
F
=
10mA, I
C
=
55
μ
A
μ
s
μ
s
V
V
CE(sat)
Coupling
Characteristics
*3
*3
I
F
=
20mA
MIN.
55
Conditions
TYP.
1.2
10
100
300
17
MAX.
1.4
150
150
0.4
50
50
Response time
Collector-emitter saturation voltage
*3 Output and coupling characteristics are common to the both phototransistors
*4 Characteristics except leak current is measured at
θ=
180
,
φ=
0
Leak current is the output current of transistor when
θ=±
90
,
φ=
0
and I
C
=
OFF
(T
a
=
25
C)
Rise time
Fall time
*4
*5
ON
ON
*5
0
30
60
120
150
210
θ
I
C1
I
C2
Conditions : I
F
=
5mA, V
CE
=
5V,
φ=±
5
*5
Indefinite
ON
*5
OFF
OFF
*5
240
300
330
360
PT
GL
Device state diagram
Gravity direction
+
φ
Gravity direction
(Viewing from detecting side)
+
θ
(
Viewing from detecting side
)
PT
1
output
PT
2
output
(ON)
(ON)
(ON)
(ON)
(ON)
(OFF)
(OFF)
(OFF)
(OFF)
(ON)
PT
1
PT
2
PT
2
Gravity direction
PT
1
PT : Detecting
PT : Opaque
I
C1
: Output current of phototransistors PT
1
I
C2
: Output current of phototransistors PT
2
θ
: Device condition : Refer to the figure
φ
: Device condition : Refer to the figure
ON :Output current of phototransistors : 55
μ
A or more
OFF : Output current of phototransistors : 17
μ
A or less
Output current of ON/OFF is output when device is at a standstill
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|---|---|
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