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參數(shù)資料
| 型號： | GN01081B |
| 廠商： | PANASONIC CORP |
| 元件分類： | 衰減器 |
| 英文描述： | GaAs IC with built-in ferroelectric |
| 中文描述： | RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| 封裝： | ESOF-10D, 12 pin |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 56K |
| 代理商： | GN01081B |
unit: mm
1
GaAs MMICs
GN01081B
GaAs IC (with built-in ferroelectric)
8
2
2
2
1
+
–
1
2
3
4
5
10
2-0.55±0.1
Detail of Part A & B
2~12
2~12
0.3±0.1
2.2±0.2
3.4±0.2
12
11
1
3
9
8
7
6
4
1
1
Part A
Part B
1: NC
2: V
3: Source2
4: IN2
5: NC
6: NC
ESOF-10D Type Package
7: V
DD1
8: NC
9: IN1
10: NC
11: GND
12: GND
Driver amplifier for PCS
I
Features
G
High output amplifier
G
Low distortion
I
Absolute Maximum Ratings
(Ta = 25°C)
Parameter
Power supply voltage
Circuit current
Max input power
Allowable power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
DD
I
DD
P
in
P
D
T
opr
T
stg
Ratings
8
100
5
450
30 to +90
40 to +120
Unit
V
mA
dBm
mW
°C
°C
I
Electrical Characteristics
(V
DD
= 3.0V, f = 1880MHz, Pout = 11.0dBm, Ta = 25 ± 3°C)
Parameter
Circuit current
Power gain
Adjacent channel
leakage power (ACP) 1
Adjacent channel
leakage power (ACP) 2
Conditions
IS
95 modulation, ±1.25MHz Detuning
30kHz Bandwidth
IS
95 modulation, ±2.25MHz Detuning
30kHz Bandwidth
min
22
typ
60
25
56
71
max
75
27
51
66
Unit
mA
dB
dBc
dBc
Symbol
I
DD
PG
ACP1
ACP2
Test method
(1)
(1)
(1)
(2)
(1)
(2)
Test method (1): Measurement circuit is shown in the following diagram.
(2): This item is the sampling guaranteed item.
10 9 8 7 6
1
12
2 3 4 5
11
150
5.6nH
2pF
1.5nH
100pF
1pF
10
1.5nH
33nH
5.6nH
20
2pF
100pF+1000pF
100pF+47nF
IN
OUT
V
DD2
V
DD1
33pF
I
Measurement Circuit
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