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參數(shù)資料
| 型號(hào)： | GN01096B |
| 廠商： | PANASONIC CORP |
| 元件分類： | 衰減器 |
| 英文描述： | GaAs IC(with built-in ferroelectric) |
| 中文描述： | 870 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| 封裝： | S-MINI, 6 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 29K |
| 代理商： | GN01096B |
GaAs MMIC
GN01096B
GaAs IC (with built-in ferroelectric)
1
For low noise amplifier of cellular phone
Other communication equipment
I
Features
Super miniature S-Mini 6-pin package (2125 size)
Receiver amplifier : Low distortion with built-in gain control function
I
Absolute Maximum Ratings
T
a
=
25
°
C
1 :RF
IN
2 :GND
3 :V
AGC
4 :V
DD
5 :GND
6 :Source
EIAJ : SC-88
S Mini Type Package (6-pin)
Parameter
Symbol
Conditions
min
typ
max
Unit
Circuit current
*1
I
DD
PG1
V
AGC
=
1.5 V, f
=
850 MHz
V
AGC
=
1.5 V, f
=
850 MHz
V
AGC
=
0.1 V, f
=
850 MHz
V
AGC
=1.5 V, f=832 MHz
f=850 MHz, f=870 MHz
V
AGC
=0.1 V, f=832 MHz
f=850 MHz, f=870 MHz
V
AGC
=
1.5 V to
0.1 V, f
=
850 MHz
V
AGC
=
1.5 V, f
=
850 MHz
V
AGC
=
1.5 V, f
=
850 MHz
V
AGC
=
1.5 V, f
=
850 MHz/850.9 MHz
V
AGC
=
1.5 V, f
=
850 MHz/850.9 MHz
6.5
10
mA
Power gain 1
*1
12.5
15.0
17.5
dB
Power gain 2
*1
Noise figure 1
*1, 2
PG2
10.0
6.5
1.4
3.0
2.0
dB
NF1
dB
Noise figure 2
*1, 2
NF2
17
22
dB
Dynamic range
*1
DR
18
22
27
dB
Input return loss
*1, 2
S11
10
10
6
6
dB
Output return loss
*1, 2
S22
dB
Third input intersept point
*1, 2
IIP3
4.0
5.8
dBm
Third output intersept point
*1, 2
OIP3
16.5
21.0
dBm
I
Electrical Characteristics
V
DD
=
2.9 V, P
IN
=
25 dBm, T
a
=
25
°
C
±
3
°
C
Unit: mm
0.12
+0.05
0.02
Marking Symbol : KW
Note) *1 : Refer to measurement circuit.
*2 : Design-guaranteed items.
Parameter
Symbol
Ratings
Unit
Power supply voltage
V
DD
I
DD
V
AGC
P
IN
P
D
T
opr
T
stg
8
V
Circuit current
20
mA
Gate control voltage
0 to
4
5
V
Max input power
dBm
Allowable power dissipation
150
mW
Operating ambient temperature
30 to
+
90
40 to
+
120
°
C
°
C
Storage temperature
2
±
1
±
1
3
2
0.2
±0.05
0
±
R0.2
0
0
2.0
±0.1
0
0
±
0
±
6
5
4
0.65
0.65
6 - 0
°
to 10
°
0
0
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