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參數(shù)資料
| 型號： | GMF05C-GS08 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | ESD Protection Diode Array |
| 中文描述： | ESD保護二極管陣列 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 142K |
| 代理商： | GMF05C-GS08 |
www.vishay.com
2
Document Number 85833
Rev. 1.1, 02-Mar-05
VISHAY
GMF05C
Vishay Semiconductors
Electrical Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Reverse stand-off voltage
Typical Characteristics (Tamb = 25
°
C unless otherwise specified)
Test condition
Symbol
V
RWM
V
BR
I
R
V
C
V
C
V
F
C
j
Min
Typ.
Max
5
Unit
V
Reverse breakdown voltage
I
t
= 1 mA
V
RWM
= 5 V
I
PP
= 1 A, 8/20
μ
s waveform
I
PP
= 12 A, 8/20
μ
s waveform
I
F
= 1 A, 8/20
μ
s waveform
V
R
= 0 V, f = 1 MHz
6
V
μ
A
V
Reverse leakage current
1
Clamping voltage
9.5
12.5
V
Peak forward voltage
1.5
V
Junction capacitance between I/
O pins and Gnd
150
pF
Figure 1. Non -Repetitive Peak Pulse Power vs. Pulse Time
Figure 2. Pulse Derating Curve
P
P
-
P
0.1
1
10
0.1
1.0
10
td -
Pulse Duration (
μ
s)
100
1000
0.01
ggmf05c-hs3_01
0
25
50
75
100
0
75
25
50
100
125
150
175
P
P
)
P
)
D
T
A
-
AmbientTemperature (
°
C)
ggmf05c-hs3_02
Figure 3. Pulse Waveform
Figure 4. Clamping Voltage vs. Peak Pulse Current
0
50
100
90
80
70
60
40
30
20
10
110
I
P
R
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of I
PPM
0
10
5
15
20
30
25
t - Time (
μ
s)
t
d
=I
PP
2
ggmf05c-hs3_03
I
PP
- Peak Pulse Current (A)
0
10
20
18
16
14
12
8
6
4
2
V
C
-
C
0
4
2
6
8
14
10
12
ggmf05c-hs3_04
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PDF描述 |
|---|---|
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| GMF05MC-GS08 | Low Capacitance ESD Protection Diode Array |
| GMF05LC-GS08 | ESD Protection Diode Array in SOT-363 |
| GMF05LC | ESD protection diode array; 6-Lines Uni-Directional or 5-Lines Bi-Directional |
| GN01081B | GaAs IC with built-in ferroelectric |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| GMF05C-HS3 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:5-Line ESD Protection Diode Array in LLP75-6A |
| GMF05C-HS3-GS08 | 功能描述:ESD 抑制器 5.0 Volt 200 Watt 5 Diode RoHS:否 制造商:STMicroelectronics 通道:8 Channels 擊穿電壓:8 V 電容:45 pF 端接類型:SMD/SMT 封裝 / 箱體:uQFN-16 功率耗散 Pd: 工作溫度范圍:- 40 C to + 85 C |
| GMF05C-HS3-GS18 | 功能描述:ESD 抑制器 5.0 Volt 200 Watt 5 Diode RoHS:否 制造商:STMicroelectronics 通道:8 Channels 擊穿電壓:8 V 電容:45 pF 端接類型:SMD/SMT 封裝 / 箱體:uQFN-16 功率耗散 Pd: 工作溫度范圍:- 40 C to + 85 C |
| GMF05C-HSF-GS08 | 功能描述:ESD 抑制器 ESD PROTECTION DIODE LLP75-e4 RoHS:否 制造商:STMicroelectronics 通道:8 Channels 擊穿電壓:8 V 電容:45 pF 端接類型:SMD/SMT 封裝 / 箱體:uQFN-16 功率耗散 Pd: 工作溫度范圍:- 40 C to + 85 C |
| GMF05G2 | 制造商:VISHAY 功能描述:New |
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