- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383012 > GM72V66841ELT-7K (HYNIX SEMICONDUCTOR INC) 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM PDF資料下載
參數(shù)資料
| 型號： | GM72V66841ELT-7K |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 |
| 封裝： | 0.400 INCH, TSOP2-54 |
| 文件頁數(shù)： | 16/57頁 |
| 文件大?。?/td> | 592K |
| 代理商： | GM72V66841ELT-7K |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁當前第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁
LG Semicon
GM72V66841CT/CLT
Mode Register Configuration
Burst read and SINGLE WRITE:
Data is only written to the column address
specified during the write cycle, regardless of the
burst length.
A7:
Keep this bit Low at the mode register set cycle.
A6, A5, A4: (LMODE):
These pins specify the CAS latency.
A3: (BT):
A burst type is specified . When full-page burst is
performed, only "sequential" can be selected.
A2, A1, A0: (BL):
These pins specify the burst length.
The mode register is set by the input to the
address pins (A0 to A13) during mode register
set cycles. The mode register consists of five
sections, each of which is assigned to address
pins.
A13, A12, A11, A10, A9, A8: (OPCODE):
The synchronous DRAM has two types of write
modes. One is the burst write mode, and the
other is the single write mode. These bits specify
write mode.
Burst read and BURST WRITE:
Burst write is performed for the specified burst
length starting from the column address specified
in the write cycle.
A11 A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
OPCODE
0
LMODE
BT
BL
A3
0
1
Burst Type
Sequential
Interleave
A6 A5 A4
0
0
0
0
0
1
0
1
0
0
1
1
CAS Latency
R
R
2
3
1
X
X
R
A2 A1 A0
0
0
0
0
0
1
0
1
0
0
1
1
1
0
0
1
0
1
1
1
0
1
1
1
Burst Length
BT=0
1
2
4
8
R
R
R
F.P.
BT=1
1
2
4
8
R
R
R
R
F.P. = Full Page
(512:GM72V66841CT/CLT)
R is Reserved (inhibit)
X: 0 or 1
15
A13 A12
Write mode
Burst read and BURST WRITE
R
Burst read and SINGLE WRITE
R
A13
0
A11 A10 A9
A8
A12
X
X
X
0
X
X
X
0
X
X
X
0
0
1
1
0
1
0
1
0
X
X
X
相關PDF資料 |
PDF描述 |
|---|---|
| GM72V66841ELT-8 | 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
| GM72V66841ET | 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
| GM72V66841Exx | 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
| GM72V66841ELT-7 | 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
| GM72V66841ELT-75 | 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| GM72V66841ELT-8 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
| GM72V66841ET | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
| GM72V66841ET-7 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
| GM72V66841ET-75 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SDRAM |
| GM72V66841ET-7J | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SDRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復。