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參數(shù)資料
| 型號(hào)： | GLT4160L04E-60J3 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT |
| 中文描述： | 4米× 4 CMOS動(dòng)態(tài)RAM的擴(kuò)展數(shù)據(jù)輸出 |
| 文件頁數(shù)： | 22/22頁 |
| 文件大?。?/td> | 588K |
| 代理商： | GLT4160L04E-60J3 |
G -LINK
GLT4160L04
4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
May 2001 (Rev.3.1)
G-Link Technology
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation,Taiwan
6F, No. 24-2, Industry E. RD, IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
- 9 -
TEST MODE CYCLE
40
50
60
70
Parameter
Symbol Min. Max. Min. Max. Min. Max. Min. Max. Unit
Notes
Random read or write cycle time
tRC
89
109
129
ns
Read-modify-write cycle time
tRWC
121
145
175
ns
Access time from RAS
tRAC
55
65
75
ns
1,2,3,7
Access time from CAS
tCAC
18
20
25
ns
1,3,7
Access time from column address
tAA
30
35
40
ns
1,2,7
RAS pulse width
tRAS
55
10k
55
10k
65
10k
75
10k
ns
CAS pulse width
tCAS
13
10k
13
10k
15
10k
20
10k
ns
RAS hold time
tRSH
18
20
25
ns
CAS hold time
tCSH
43
50
55
ns
Column address to RAS lead time
tRAL
30
35
40
ns
CAS to WE delay time
tCWD
35
39
49
ns
8
RAS to WE delay time
tRWD
72
84
99
ns
8
Column address to WE delay time
tAWD
47
54
64
ns
8
CAS Precharge to WE delay time
tCPWD
52
59
69
ns
8
EDO Page Mode cycle time
tPC
25
30
35
ns
EDO page mode read-modify-write cycle time
tPRWC
53
61
76
ns
RAS Pulse width (EDO page cycle)
tRASP
55
100k
55
100k
65
100k
75
100k
ns
Access time form CAS precharge
tCPA
33
40
45
ns
1
OE access time
tOEA
18
20
25
ns
OE to data delay
tOED
18
20
25
ns
OE command hold time
tOEH
18
20
25
ns
Write command set-up time (Test mode in)
tWTS
10
ns
Write command hold time (Test mode in)
tWTH
10
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GLT4160L04E-60TC | 4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT |
| GLT4160L04E-70J3 | 4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT |
| GLT4160L04E-70TC | 4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT |
| GLT4160L04S-40J3 | 4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT |
| GLT4160L04S-40TC | 4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GLT4160L04E-60TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT |
| GLT4160L04E-70J3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT |
| GLT4160L04E-70TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT |
| GLT4160L04S-40J3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT |
| GLT4160L04S-40TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT |
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