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參數(shù)資料
| 型號： | GLT4160L04-50TC |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT |
| 中文描述： | 4米× 4 CMOS動態(tài)RAM的擴(kuò)展數(shù)據(jù)輸出 |
| 文件頁數(shù)： | 9/22頁 |
| 文件大小： | 588K |
| 代理商： | GLT4160L04-50TC |
G-LINK
GLT4160L04
4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
May 2001 (Rev.3.1)
G-Link Technology
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation,Taiwan
6F, No. 24-2, Industry E. RD, IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
- 9 -
TEST MODE CYCLE
40
50
60
70
Parameter
Random read or write cycle time
Symbol Min. Max. Min. Max. Min. Max. Min. Max. Unit
t
RC
89
89
t
RWC
121
121
t
RAC
55
55
t
CAC
18
18
t
AA
30
30
t
RAS
55
10k
55
10k
t
CAS
13
10k
13
10k
t
RSH
18
18
t
CSH
43
43
t
RAL
30
30
t
CWD
35
35
t
RWD
72
72
t
AWD
47
47
t
CPWD
52
52
t
PC
25
25
t
PRWC
53
53
t
RASP
55
100k
55
100k
t
CPA
33
33
t
OEA
18
18
t
OED
18
18
t
OEH
18
18
t
WTS
10
10
t
WTH
10
10
Notes
109
129
ns
Read-modify-write cycle time
145
175
ns
Access time from RAS
65
75
ns
1,2,3,7
Access time from CAS
Access time from column address
20
25
ns
1,3,7
35
40
ns
1,2,7
RAS pulse width
65
10k
75
10k
ns
CAS pulse width
RAS hold time
15
10k
20
10k
ns
20
25
ns
CAS hold time
Column address to RAS lead time
50
55
ns
35
40
ns
CAS to WE delay time
39
49
ns
8
RASto WE delay time
Column address to WE delay time
84
99
ns
8
54
64
ns
8
CASPrecharge to WE delay time
EDO Page Mode cycle time
59
69
ns
8
30
35
ns
EDO page mode read-modify-write cycle time
61
76
ns
RAS Pulse width (EDO page cycle)
Access time form CAS precharge
65
100k
75
100k
ns
40
45
ns
1
OE access time
20
25
ns
OE to data delay
20
25
ns
OE command hold time
Write command set-up time (Test mode in)
20
25
ns
10
10
ns
Write command hold time (Test mode in)
10
10
ns
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| GLT4160L04-60J3 | 4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT |
| GLT4160L04-60TC | 4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT |
| GLT4160L04-70J3 | 4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT |
| GLT4160L04-70TC | 4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT |
| GLT4160L04E-40J3 | 4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GLT4160L04-60J3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT |
| GLT4160L04-60TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT |
| GLT4160L04-70J3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT |
| GLT4160L04-70TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT |
| GLT4160L04E-40J3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT |
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