參數(shù)資料
型號: GLT4160L04-50TC
廠商: Electronic Theatre Controls, Inc.
英文描述: 4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
中文描述: 4米× 4 CMOS動態(tài)RAM的擴(kuò)展數(shù)據(jù)輸出
文件頁數(shù): 10/22頁
文件大?。?/td> 588K
代理商: GLT4160L04-50TC
G-LINK
GLT4160L04
4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
May 2001 (Rev.3.1)
G-Link Technology
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation,Taiwan
6F, No. 24-2, Industry E. RD, IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
- 10 -
Notes:
1. Measure with a load equivalent to one TTL input and 100 pF.
2. Assumes that t
RCD
t
RCD
(max.). If t
RCD
is greater than t
RCD
(max.), access time will be t
AA
dominant.
3. Assumes that t
RAD
t
RAD
(max.). If t
RAD
is greater than t
RCD
(max.), access time will be
controlled by t
CAC
.
4. Either t
RRH
or t
RCH
must be satisfied for a Read Cycle.
5. Access time is determined by the longest of t
AA
, t
CAC
and t
CPA
.
6. Assumes that t
RAD
t
RAD
(max.).
7. Operation within the t
RAD
(max.) limit ensures that t
RAC
(max.) can be met. t
RAD
(max.)
is specified as a reference point only. If t
RAD
is greater than the specified t
RAD
(max.)
limit, the access time is controlled by t
CAA
and t
CAC
.
8. t
WCS
, t
RWD
, t
AWD
and t
CWD
are not restrictive operating parameters.
9. t
WCS
(min.) must be satisfied in an Early Write Cycle.
10. t
DS
and t
DH
are referenced to the latter occurrence of
CAS
or
WE
.
11.
T
is measured between V
IH
(min.) and V
IL
(max.). AC-measurements assume t
T
= 2 ns.
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