參數(shù)資料
型號: GLT4160L04-40TC
廠商: Electronic Theatre Controls, Inc.
英文描述: 4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
中文描述: 4米× 4 CMOS動態(tài)RAM的擴(kuò)展數(shù)據(jù)輸出
文件頁數(shù): 7/22頁
文件大?。?/td> 588K
代理商: GLT4160L04-40TC
G-LINK
GLT4160L04
4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
May 2001 (Rev.3.1)
G-Link Technology
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation,Taiwan
6F, No. 24-2, Industry E. RD, IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
- 7 -
AC Characteristics
40
50
60
70
Parameter
Data Set-Up Time
Symbol Min. Max. Min. Max. Min. Max. Min. Max. Unit Notes
t
DS
0
0
t
DH
7
8
t
DHR
36
40
t
RWD
54
67
t
CWD
24
30
t
AWD
32
42
t
CPWD
47
47
t
RPC
0
5
t
CPT
20
20
0
0
ns
Data Hold Time
10
15
ns
Data Hold Time Referenced to RAS
45
50
ns
RAS to WE Delay Time
79
94
ns
CAS to WE Delay Time
34
44
ns
Column Address to WE Delay Time
49
59
ns
CASPrecharge to WEDelay
RAS to CAS Precharge Time
54
64
ns
5
5
ns
CASprecharge time (CAS Before RAS counter
test cycle)
20
25
ns
Access Time from CAS Precharge
EDO Page Mode Cycle Time
t
CPA
t
PC
t
PRWC
t
CP
t
RASP
t
RHCP
22
28
35
40
ns
18
20
25
30
ns
EDO Page Mode Read-Modify-Write Cycle Time
50
47
56
71
ns
CAS Precharge Time (EDO Page Mode)
6
8
10
10
ns
RAS Pulse Width (EDO Page Mode Only)
40
100k
50
100k
60
100k
70
100k
ns
RAS Hold Time from CAS precharge
30
30
35
40
ns
Access Time from OE
t
OEA
t
OED
t
OLZ
t
OEZ
t
WED
t
OEH
t
DOH
t
REZ
t
WEZ
t
OCH
t
CHO
t
OEP
t
WPE
t
CSR
12
13
15
0
20
ns
8
OE to Data Delay Time
8
13
15
20
ns
OE to Output Low-Z
3
3
0
0
ns
OE to Output High-Z
3
8
3
13
3
15
3
20
ns
WE to Data Delay
15
15
15
20
ns
OE Command Hold Time
7
13
15
20
ns
Data Output Hold after CAS low
3
5
5
5
ns
RAS to Output High-Z
3
8
3
13
3
15
3
20
ns
WE to Output High-Z
3
10
3
13
3
15
3
20
ns
OE to CAS Hold Time
5
5
5
5
ns
CAS Hold Time to OE
5
5
5
5
ns
OE Precharge Time
WE Puts width (EDO mixed read write cycle)
5
5
5
5
ns
5
5
5
5
ns
CAS Set-Up Time for CAS -before-RAS Cycle
5
5
5
5
ns
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