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參數(shù)資料
| 型號： | GLT4160L04-40TC |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT |
| 中文描述： | 4米× 4 CMOS動態(tài)RAM的擴展數(shù)據(jù)輸出 |
| 文件頁數(shù)： | 6/22頁 |
| 文件大?。?/td> | 588K |
| 代理商： | GLT4160L04-40TC |
G-LINK
GLT4160L04
4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
May 2001 (Rev.3.1)
G-Link Technology
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation,Taiwan
6F, No. 24-2, Industry E. RD, IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
- 6 -
AC Characteristics
T
A
=0
°
C to 70
°
C , -20
°
C to 85
°
C V
CC
= 3.3 V
±
0.3V, VIH/VIL = 3/0 V, V
OH
/V
OL
= 2/0.8V
An initial pause of 200
μ
s and 8
CAS
-before-
RAS
or
RAS
-only refresh cycles are required after power-up.
40
50
60
70
Parameter
Read or Write Cycle Time
Symbol Min. Max. Min. Max. Min. Max. Min. Max. Unit Notes
t
RC
70
84
104
t
RWC
91
116
140
t
RP
25
30
t
RAS
40
10K
50
10k
t
RAC
40
50
t
CAC
12
13
t
AA
20
25
t
CLZ
0
3
t
CEZ
3
8
3
13
t
RSH
12
13
t
CSH
34
38
t
CAS
7
10k
8
10k
t
RCD
18
28
20
37
t
RAD
13
20
15
25
t
CRP
5
5
t
ASR
0
0
t
RAH
8
10
t
ASC
0
0
t
CAH
6
8
t
RAL
20
25
t
AR
34
40
t
RCS
0
0
t
RCH
0
0
t
RRH
0
0
t
WCS
0
0
t
WCH
6
10
t
WP
6
10
t
RWL
12
13
t
CWL
8
8
124
ns
Read Modify Write Cycle Time
170
ns
RASPrecharge Time
40
50
ns
RAS Pulse Width
60
10k
70
10k
ns
Access Time from RAS
60
70
ns
1,2,3
Access Time from CAS
Access Time from Column Address
15
20
ns 1,5,10
30
35
ns
1,5,6
CAS to Output Low-Z
3
3
ns
CAS to Output High-Z
3
15
3
20
ns
RAS Hold Time
15
20
ns
CAS Hold Time
45
50
ns
CAS Pulse Width
10
10k
15
10k
ns
RAS to CAS Delay Time
20
45
20
50
ns
RAS to Column Address Delay Time
15
30
15
35
ns
7
CAS to RAS Precharge Time
Row Address Set-Up Time
5
5
ns
0
0
ns
Row Address Hold Time
10
10
ns
Column Address Set-Up Time
0
0
ns
Column Address Hold Time
10
15
ns
Column Address to RAS Lead Time
30
35
ns
Column Address Hold Time Referenced to RAS
Read Command Set-Up Time
45
50
ns
0
0
ns
Read Command Hold Time Referenced to CAS
0
0
ns
4
Read Command Hold Time Referenced to RAS
Write Command Set-Up Time
0
0
ns
4
0
0
ns
8,9
Write Command Hold Time
10
15
ns
Write Command Pulse Width
10
15
ns
Write Command to RAS Lead Time
15
30
ns
Write Command to CAS Lead Time
10
15
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GLT4160L04-50J3 | 4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT |
| GLT4160L04-50TC | 4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT |
| GLT4160L04-60J3 | 4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT |
| GLT4160L04-60TC | 4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT |
| GLT4160L04-70J3 | 4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GLT4160L04-50J3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT |
| GLT4160L04-50TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT |
| GLT4160L04-60J3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT |
| GLT4160L04-60TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT |
| GLT4160L04-70J3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT |
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