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參數(shù)資料
| 型號： | GFD2206 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 42A I(D) | TO-252AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 60V的五（巴西）直| 42A條（?。﹟對252AA |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 87K |
| 代理商： | GFD2206 |
GFD2206
N-Channel Enhancement-Mode MOSFET
Electrical Characteristics
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 250
μ
A
60
–
–
V
Drain-Source On-State Resistance
(1)
R
DS(on)
V
GS
= 10V, I
D
= 21A
–
15
22
m
V
GS
= 6V, I
D
= 20A
–
19
25
Gate Threshold Voltage
Forward Transconductance
(1)
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
2.0
–
4.0
V
g
fs
V
DS
= 25V, I
D
= 21A
–
50
–
S
Drain-Source Leakage Current
I
DSS
V
DS
= 48V, V
GS
= 0V
V
GS
=
±
20V, V
DS
= 0V
–
–
1
μ
A
Gate-Source Leakage
I
GSS
–
–
±
100
nA
Dynamic
Total Gate Charge
(1)
Q
g
V
DS
=48V,I
D
=21A,V
GS
=5V
–
36
50
–
65
80
nC
Gate-Source Charge
(1)
Gate-Drain (
“
Miller
”
) Charge
(1)
Turn-On Delay Time
(1)
Rise Time
(1)
Turn-Off Delay Time
(1)
Fall Time
(1)
Q
gs
V
DS
= 48V, V
GS
= 10V
–
15
—
Q
gd
I
D
= 21A
–
17
—
t
d(on)
–
20
35
t
r
V
DD
= 30V
–
107
160
t
d(off)
I
D
= 21A, R
G
= 12
R
D
= 1.4
, V
GEN
= 10V
–
92
120
ns
t
f
–
56
90
Input Capacitance
C
iss
V
GS
= 0V
–
3425
–
Output Capacitance
C
oss
V
DS
= 25V
–
320
–
pF
Reverse Transfer Capacitance
C
rss
f = 1.0MH
Z
–
162
–
Source-Drain Diode
Continuous Source Current
I
S
–
–
–
42
A
Pulsed Source Current
Diode Forward Voltage
(1)
Source-Drain Reverse Recovery Time
(1)
Source-Drain Reverse Recovery Charge
(1)
I
SM
–
–
–
100
V
SD
I
S
= 21A, V
GS
= 0V
–
0.93
1.3
V
t
rr
I
F
= 21A, di/dt = 100A/
μ
s
–
53
–
ns
Q
rr
–
92
–
nC
Notes:
(1) Pulse width
≤
300
μ
s; duty cycle
≤
2%
G
D
S
V
IN
V
DD
V
GEN
R
G
R
D
V
OUT
DUT
Input, V
IN
t
d(on)
Output, V
OUT
t
on
t
r
t
d(off)
t
off
t
f
INVERTED
90%
10%
10%
90 %
50%
50%
10%
90%
PULSE WIDTH
Switching
Test Circuit
Switching
Waveforms
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