參數(shù)資料
型號(hào): GB10XF120K
廠商: VISHAY SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: TRANSISTOR 20 A, 1200 V, N-CHANNEL IGBT, ECONO26PACK-17, Insulated Gate BIP Transistor
中文描述: IGBT Modules 20 Amp 1200 Volt Non-Punch Through
文件頁(yè)數(shù): 6/8頁(yè)
文件大?。?/td> 212K
代理商: GB10XF120K
4/7
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400
500
600
700
800
900 1000
0
5
10
15
20
25
30
35
dif/dt (A/μs)
I
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
0.01
0.1
1
10
SINGLE PULSE
(THERMAL RESPONSE)
0.5
0.3
0.1
0.05
0.02
0.01
Ri (°C/W)
0.5125
0.4129
1.0447
τ
i (sec)
0.000527
0.001438
0.027308
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + tc
t1 , Rectangular Pulse Duration (sec)
T
)
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci=
τ
i
/
Ri
Ci=
τ
i
/
Ri
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
0.001
0.01
0.1
1
10
SINGLE PULSE
(THERMAL RESPONSE)
0.5
0.3
0.1
0.05
0.02
0.01
Ri (°C/W)
0.5523
0.8679
τ
i (sec)
0,413
0.649
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + tc
t1 , Rectangular Pulse Duration (sec)
T
)
τ
J
τ
1
τ
1
τ
2
τ
2
R
1
R
1
R
2
R
2
Ci= i
/
Ri
Ci=
i
/
Ri
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