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參數(shù)資料
| 型號(hào)： | GB10XF120K |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | TRANSISTOR 20 A, 1200 V, N-CHANNEL IGBT, ECONO26PACK-17, Insulated Gate BIP Transistor |
| 中文描述： | IGBT Modules 20 Amp 1200 Volt Non-Punch Through |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 212K |
| 代理商： | GB10XF120K |
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1
10
100
1000
10000
0.01
0.1
1
10
100
Vce (V)
I
20 μs
100 μs
1 ms
10 ms
DC
10
100
1000
10000
1
10
100
Vce (V)
I
0
0.5
1
1.5
2
2.5
3
3.5
4
0
5
10
15
20
25
30
35
40
Vf (V)
I
Tj = 25°C
Tj = 125°C
0
10
20
30
40
50
0
5
10
15
20
25
30
35
Rg ( )
I
0
5
10
15
20
25
0
5
10
15
20
25
30
35
40
45
If (A)
I
Rg=4.7
Rg=10
Rg=22
Rg=33
Rg=47
0
5
10
15
20
0
10
20
30
40
50
60
70
80
Vge (V)
Tj = 25°C
Tj = 125°C
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