參數(shù)資料
型號(hào)： GA200
廠商： MICROSEMI CORP-LAWRENCE
元件分類(lèi)： 晶閘管
英文描述： SCRs Nanosecond Switching, Planar
中文描述： 0.314 A, 60 V, SCR, TO-18
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 99K
代理商： GA200
GA200HS60S
Bulletin I27121 rev. B 07/02
2
www.irf.com
T
J
T
STG
R
thJC
R
thCS
T
Operating Junction Temperature Range
Storage Temperature Range
Junction-to-Case
Case-to-Sink
Mounting torque
Case to heatsink
Case to terminal 1, 2, 3
Weight
- 40
- 40
150
125
0.15
°C
°C/ W
0.1
4
3
Nm
185
g
V
CES
V
CE(on)
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Voltage
600
V
V
GE
= 0V, I
C
= 1mA
V
GE
= 15V, I
C
= 200A
V
GE
= 15V, I
C
= 200A, T
J
= 125°C
I
C
= 0.5mA
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 125°C
V
GE
= ± 20V
1.19
1.17
1.25
-
6
1
10
± 250
V
GE(th)
I
CES
Gate Threshold Voltage
Collector-to-Emiter Leakage
Current
Gate-to-Emitter Leakage Current
3
mA
I
GES
nA
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
Q
g
Q
ge
Q
gc
E
on
E
off
E
ts
E
on
E
off
E
ts
C
ies
C
oes
C
res
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1600 1700
260
580
27
47
74
29
77
106
32500
2080
380
nC
I
C
= 200A
V
CC
= 400V
V
GE
= 15V
I
C
= 200A, V
CC
= 480V, V
GE
= 15V
R
g
= 10
free-wheeling DIODE: 30ETH06
340
670
mJ
31
90
121
mJ
I
C
= 200A, V
CC
= 480V, V
GE
= 15V
R
g
= 10
free-wheeling DIODE: 30ETH06, T
J
= 125°C
V
GE
= 0V
V
CC
= 30V
f = 1.0 MHz
pF
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
Thermal- Mechanical Specifications
Parameters
Min
Typ
Max
Units
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