參數(shù)資料
型號(hào)： GA150TD12U
文件頁(yè)數(shù)： 2/10頁(yè)
文件大?。?/td> 181K
代理商： GA150TD12U
GA150TD120U
2
www.irf.com
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate - Emitter Charge (turn-on)
Q
gc
Gate - Collector Charge (turn-on)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Energy
E
off
Turn-Off Switching Energy
E
ts
Total Switching Energy
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
t
rr
Diode Reverse Recovery Time
I
rr
Diode Peak ReverseCurrent
Q
rr
Diode Recovery Charge
di
(rec)
M
/dt
Diode Peak Rate of Fall of Recovery
During t
b
Min. Typ. Max. Units
—
1139 1709
—
192
—
377
—
414
—
208
—
552
—
342
—
29
—
32
—
61
—
25630
—
1139
—
221
—
186
—
133
—
12381
—
2524
Conditions
V
CC
= 400V, V
GE
= 15V
I
C
= 171A
T
J
= 25°C
R
G1
= 15
, R
G2
= 0
I
C
= 150A
V
CC =
720V
V
GE
= ±15V
See Fig.17 through Fig.21
288
566
—
—
—
—
—
—
90
—
—
—
—
—
—
—
nC
ns
mJ
V
GE
= 0V
V
CC
= 30V
= 1 MHz
I
C
= 150A
R
G1
= 15
R
G2
= 0
V
CC =
720V
di/dt=1260A/μs
pF
ns
A
nC
A/μs
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 1200
V
CE(on)
Collector-to-Emitter Voltage
Min. Typ. Max. Units
—
—
2.4
—
2.2
3.0
—
-11
—
201
—
—
—
—
—
2.7
—
2.6
—
—
Conditions
V
GE
= 0V, I
C
= 1mA
V
GE
= 15V, I
C
= 150A
V
GE
= 15V, I
C
= 150A, T
J
= 125°C
I
C
= 1.75 mA
mV/°C V
CE
= V
GE
, I
C
= 1.75mA
S
V
CE
= 25V, I
C
= 150A
mA
V
GE
= 0V, V
CE
= 1200V
V
GE
= 0V, V
CE
= 1200V, T
J
= 125°C
V
I
F
= 150A, V
GE
= 0V
I
F
= 150A, V
GE
= 0V, T
J
= 125°C
nA
V
GE
= ±20V
—
2.9
—
6.0
—
—
2
20
3.5
—
500
V
V
GE(th)
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage —
g
fe
Forward Transconductance
I
CES
Collector-to-Emitter Leaking Current
Gate Threshold Voltage
V
FM
Diode Forward Voltage - Maximum
I
GES
Gate-to-Emitter Leakage Current
Dynamic Characteristics - T
J
= 125°C (unless otherwise specified)
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Details of note
through
are on the last page
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