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參數(shù)資料
| 型號： | FZT1049A |
| 廠商： | ZETEX PLC |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR |
| 中文描述： | 5 A, 25 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | SOT-223, 4 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 99K |
| 代理商： | FZT1049A |
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
80
130
V
I
C
=100
μ
A
Collector-Emitter
Breakdown Voltage
V
CES
80
130
V
I
C
=100
μ
A *
Collector-Emitter
Breakdown Voltage
V
CEO
30
40
V
I
C
=10mA
Collector-Emitter
Breakdown Voltage
V
CEV
80
130
V
I
C
=100
μ
A, V
EB
=1V
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5
9
V
I
E
=100
μ
A
Collector Cut-Off Current
I
CBO
0.3
10
nA
V
CB
=35V
Emitter Cut-Off Current
I
EBO
0.3
10
nA
V
EB
=4V
Collector Emitter Cut-Off
Current
I
CES
0.3
10
nA
V
CES
=35V
Collector-Emitter
Saturation Voltage
V
CE(sat)
35
70
180
250
60
100
250
330
mV
mV
mV
mV
I
C
=0.5A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=3A, I
B
=30mA*
I
C
=5A, I
B
=50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
950
1050
mV
I
C
=5A, I
B
=50mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
900
1000
mV
I
C
=5A, V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
280
300
300
180
40
440
450
450
280
80
1200
I
C
=10mA, V
CE
=2V*
I
C
=0.5A, V
=2V*
I
C
=1A, V
CE
=2V*
I
C
=5A, V
CE
=2V*
I
C
=20A, V
CE
=2V*
Transition Frequency
f
T
180
MHz
I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance
C
obo
45
60
pF
V
CB
=10V, f=1MHz
Turn-on Time
t
on
125
ns
I
C
=4A, I
B
=40mA, V
CC
=10V
Turn-off Time
t
off
380
ns
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
FZT1049A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FZT1049A | 制造商:Diodes Incorporated 功能描述:TRANSISTOR NPN SOT-223 |
| FZT1049ATA | 功能描述:兩極晶體管 - BJT NPN High Gain & Crnt RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FZT1049ATC | 功能描述:兩極晶體管 - BJT NPN High Gain & Crnt RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FZT1051 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| FZT1051A | 制造商:Diodes Incorporated 功能描述: |
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