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參數(shù)資料
| 型號： | FX3ASJ-3 |
| 廠商： | POWEREX INC |
| 元件分類： | JFETs |
| 英文描述： | Pch POWER MOSFET HIGH-SPEED SWITCHING USE |
| 中文描述： | 3 A, 150 V, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | COMPACT, MP-3, 3 PIN |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 44K |
| 代理商： | FX3ASJ-3 |
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Jan.1999
MITSUBISHI Pch POWER MOSFET
FX3ASJ-3
HIGH-SPEED SWITCHING USE
10
–1
10
0
2
3
5
7
10
1
2
3
5
7
–50
0
50
100
150
V
GS
= –10V
I
D
= 1/2I
D
Pulse Test
0
–0.8
–1.6
–2.4
–3.2
–4.0
–50
0
50
100
150
V
DS
= –10V
I
D
= –1mA
0
–2
–4
–6
–8
–10
0
–4
–8
–12
–16
–20
V
DS
= –50V
–80V
–100V
Tch = 25°C
I
D
= –3A
0
–2
–4
–6
–8
–10
0
–0.4
–0.8
–1.2
–1.6
–2.0
V
GS
= 0V
Pulse Test
125°C
75°C
T
C
= 125°C
0.4
0.6
0.8
1.0
1.2
1.4
–50
0
50
100
150
V
GS
= 0V
I
D
= –1mA
10
–1
10
0
2
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
10
–4
2 3 57
2 3 57
2 3 57
2 3 57
10
0
2 3 57
10
1
2 3 57
10
2
10
–3
10
–2
10
–1
P
DM
tw
D
=
T
tw
T
D = 1.0
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g
(nC)
G
G
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE V
SD
(V)
S
S
CHANNEL TEMPERATURE Tch (°C)
D
D
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
G
V
G
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
PULSE WIDTH t
w
(s)
T
t
(
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
D
D
CHANNEL TEMPERATURE Tch (°C)
D
(
D
(
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| FX3G-14MT-ESS | 制造商:Mitsubishi Electric 功能描述:FX3G PLC 100-240Vac 8 In 24Vdc, 6 Out |
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