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參數(shù)資料
| 型號： | FX3ASJ-3 |
| 廠商： | POWEREX INC |
| 元件分類： | JFETs |
| 英文描述： | Pch POWER MOSFET HIGH-SPEED SWITCHING USE |
| 中文描述： | 3 A, 150 V, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | COMPACT, MP-3, 3 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 44K |
| 代理商： | FX3ASJ-3 |
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Jan.1999
MITSUBISHI Pch POWER MOSFET
FX3ASJ-3
HIGH-SPEED SWITCHING USE
–10
–1
–7
–10
0
–2 –3
–5 –7
–2 –3
–5 –7
10
0
2
3
5
7
10
1
2
3
5
7
10
–1
T
C
= 25°C
75°C 125°C
V
DS
= –5V
Pulse Test
10
–10
–1
10
1
2
3
5
7
10
2
2
3
5
7
2
10
3
3
5
7
–10
0
–2 –3
–5 –7
–10
1
–2 –3
–5 –7
t
d(off)
t
d(on)
t
r
Tch = 25°C
V
DD
= –80V
V
GS
= –10V
R
GEN
= R
GS
= 50
t
f
0
–2
–4
–6
–8
–10
0
–2
–4
–6
–8
–10
Tc = 25°C
V
DS
= –10V
Pulse Test
10
10
2
2
3
5
7
10
3
2
3
5
7
10
4
2
3
5
7
–10
0
–10
1
–2 –3
–5 –7
–10
2
–2 –3
–5 –7
Ciss
Coss
Crss
Tch = 25°C
f = 1MH
Z
V
GS
= 0V
0
0.4
0.8
1.2
1.6
2.0
–10
–1
–10
0
–2 –3
–5 –7
–10
1
–2 –3
–5 –7
–10V
V
GS
= –4V
Tc = 25°C
Pulse Test
0
–4
–8
–12
–16
–20
0
–2
–4
–6
–8
–10
I
D
= –6A
–1A
–3A
Tc = 25°C
Pulse Test
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
D
V
D
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
D
R
D
)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
D
D
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
F
A
y
f
(
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
C
C
S
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