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參數(shù)資料
| 型號(hào)： | FVB Series |
| 英文描述： | Flash Memory Card (AMD based) 4, 8, 16 MB(4, 8, 16 M字節(jié)閃速存儲(chǔ)器卡（基于AMD）) |
| 中文描述： | 閃存卡（基于AMD）4，8，16 MB的（4，8，16米字節(jié)閃速存儲(chǔ)器卡（基于AMD）的） |
| 文件頁(yè)數(shù)： | 4/11頁(yè) |
| 文件大?。?/td> | 111K |
| 代理商： | FVB SERIES |
August 2000 Rev. 3 - ECO #13135
4
PCMCIA Flash Memory Card
FVB Series
PC Card Products
Absolute Maximum Ratings
(1)
Operating Temperature TA (ambient)
Commercial
Industrial
Storage Temperature
Voltage on any pin relative to VSS
VCC supply Voltage relative to VSS
0°C to +60 °C
-40°C to +85 °C
-40°C to +85 °C
-0.5V to VCC+0.5V
-0.5V to +7.0V
Note:
(1) Stress greater than those listed under “Absolute
Maximum ratings” may cause permanent damage to
the device. This is a stress rating only and functional
operation at these or any other conditions greater
than those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods
may affect reliability.
Symbol Parameter
Density
(Mbytes)
4,8,16
Notes
Typ
(3)
Max
Units
Test Conditions
I
CCR
VCC Read Current
40
mA
VCC = 5.25V
tcycle = 150ns
I
CCW
I
CCE
I
CCS
VCC Program Current
4,8,16
65
mA
VCC Erase Current
4,8,16
65
mA
VCC Standby Current
For max capacity 16MB
4,8,16
2
10
100
μA
VCC = 5.25V
Control Signals = VCC
Notes:
1. All currents are for Byte mode and are RMS values unless otherwise specified.
2. Control Signals: CE
#, CE
#, OE#, WE#, REG#.
3. Typical: VCC = 5V, T = +25C.
CMOS Test Conditions: VIL = VSS ± 0.2V, VIH = VCC ± 0.2V
DC Characteristics
(1)
Symbol
I
LI
Parameter
Notes
1,2
Min
Max
±20
Units
μA
Test Conditions
VCC = VCCMAX
Vin =VCC or VSS
VCC = VCCMAX
Vout =VCC or VSS
Input Leakage Current
I
LO
Output Leakage Current
1
±20
μA
V
IL
V
IH
Input Low Voltage
Input High Voltage
1
1
0
0.8
V
V
3.85
VCC+0.
5
0.4
VCC
4.2
V
OL
V
OH
V
LKO
Output Low Voltage
Output High Voltage
VCC Erase/Program
Lock Voltage
1
1
1
V
V
V
IOL = 3.2mA
IOH = -2.0mA
VCC-0.4
3.2
Notes:
1. Values are the same for byte and word wide modes for all card densities.
2. Exceptions: Leakage currents on CE1#, CE2#, OE#, REG# and WE# will be < 500 μA when VIN = GND
due to internal pull-up resistors. Leakage currents on RST will be <150μA when VIN=VCC due to
internal pull-down resistor.
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