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參數(shù)資料
| 型號(hào)： | FSR1110D |
| 廠商： | Intersil Corporation |
| 英文描述： | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| 中文描述： | 抗輻射，抗SEGR N溝道功率MOSFET |
| 文件頁(yè)數(shù)： | 6/9頁(yè) |
| 文件大小： | 164K |
| 代理商： | FSR1110D |
6
Test Circuits and Waveforms
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
t
P
V
GS
≤
20V
L
+
-
V
DS
V
DD
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
50
50
50V-150V
I
AS
+
-
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
CURRENT
TRANSFORMER
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
V
DS
DUT
R
GS
0V
V
GS
= 12V
V
DD
R
L
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
t
ON
FSR1110D, FSR1110R
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FSR1110D1 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSR1110R | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSR1110R3 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSR1110R4 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSS12 | 1 Amp. Surface Mounted Schottky Barrier Rectifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSR1110D1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSR1110R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSR1110R3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSR1110R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSR120 | 制造商:DBLECTRO 制造商全稱:DB Lectro Inc 功能描述:Axial Leaded PTC FSR Series |
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