| 型號(hào) | 廠商 | 描述 |
| fspl230r3 2 3 4 5 6 7 8 |
INTERSIL CORP | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| fspl230r4 2 3 4 5 6 7 8 |
INTERSIL CORP | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| fsps230d1 2 3 4 5 6 7 8 |
INTERSIL CORP | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| fsps230f 2 3 4 5 6 7 8 |
Intersil Corporation | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場(chǎng)效應(yīng)管) |
| fsps230r 2 3 4 5 6 7 8 |
Intersil Corporation | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場(chǎng)效應(yīng)管) |
| fsps230f3 2 3 4 5 6 7 8 |
INTERSIL CORP | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| fsps230f4 2 3 4 5 6 7 8 |
INTERSIL CORP | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| fsps230r3 2 3 4 5 6 7 8 |
INTERSIL CORP | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| fsps230r4 2 3 4 5 6 7 8 |
INTERSIL CORP | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| fsps234f 2 3 4 5 6 7 8 |
Intersil Corporation | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場(chǎng)效應(yīng)管) |
| fsps234r 2 3 4 5 6 7 8 |
Intersil Corporation | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場(chǎng)效應(yīng)管) |
| fspyc260d1 2 3 4 5 6 7 8 |
INTERSIL CORP | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| fspyc260f 2 3 4 5 6 7 8 |
Intersil Corporation | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場(chǎng)效應(yīng)管) |
| fspyc260r 2 3 4 5 6 7 8 |
Intersil Corporation | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場(chǎng)效應(yīng)管) |
| fspyc260f3 2 3 4 5 6 7 8 |
INTERSIL CORP | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| fspyc260f4 2 3 4 5 6 7 8 |
INTERSIL CORP | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| fspyc260r3 2 3 4 5 6 7 8 |
INTERSIL CORP | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| fspyc260r4 2 3 4 5 6 7 8 |
INTERSIL CORP | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| fspyc264f 2 3 4 5 6 7 8 |
Intersil Corporation | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場(chǎng)效應(yīng)管) |
| fspyc264r 2 3 4 5 6 7 8 |
Intersil Corporation | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場(chǎng)效應(yīng)管) |
| fspye230 2 3 4 5 6 7 8 |
Intersil Corporation | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| fspye230d1 2 3 4 5 6 7 8 |
INTERSIL CORP | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| fspye230f 2 3 4 5 6 7 8 |
Intersil Corporation | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| fspye230f3 2 3 4 5 6 7 8 |
INTERSIL CORP | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| fspye230f4 2 3 4 5 6 7 8 |
INTERSIL CORP | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| fspye230r 2 3 4 5 6 7 8 |
Intersil Corporation | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| fspye230r3 2 3 4 5 6 7 8 |
INTERSIL CORP | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| fspye230r4 2 3 4 5 6 7 8 |
INTERSIL CORP | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| fspye234r 2 3 4 5 6 7 8 |
Intersil Corporation | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N溝道MOS場(chǎng)效應(yīng)管) |
| fspye234d1 2 3 4 5 6 7 8 |
INTERSIL CORP | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| fspye234f 2 3 4 5 6 7 8 |
Intersil Corporation | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| fspye234f3 2 3 4 5 6 7 8 |
INTERSIL CORP | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| fspye234f4 2 3 4 5 6 7 8 |
INTERSIL CORP | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| fspye234r3 2 3 4 5 6 7 8 |
INTERSIL CORP | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| fspye234r4 2 3 4 5 6 7 8 |
INTERSIL CORP | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| fsr1110d 2 3 4 5 6 7 8 9 |
Intersil Corporation | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| fsr1110d1 2 3 4 5 6 7 8 9 |
INTERSIL CORP | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| fsr1110r 2 3 4 5 6 7 8 9 |
Intersil Corporation | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| fsr1110r3 2 3 4 5 6 7 8 9 |
INTERSIL CORP | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| fsr1110r4 2 3 4 5 6 7 8 9 |
INTERSIL CORP | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| fss12 2 |
Electronic Theatre Controls, Inc. | 1 Amp. Surface Mounted Schottky Barrier Rectifier |
| fss14 2 |
Electronic Theatre Controls, Inc. | 1 Amp. Surface Mounted Schottky Barrier Rectifier |
| fss15 2 |
Electronic Theatre Controls, Inc. | CAP 0.1UF 50V 5% X7R SMD-0805 TR-7-PL 3K/REEL |
| fss16 2 |
Electronic Theatre Controls, Inc. | 1 Amp. Surface Mounted Schottky Barrier Rectifier |
| fss13 2 |
Electronic Theatre Controls, Inc. | 1 Amp. Surface Mounted Schottky Barrier Rectifier |
| fss130r4 2 3 4 5 6 7 8 |
INTERSIL CORP | 11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| fss130r3 2 3 4 5 6 7 8 |
HARRIS SEMICONDUCTOR | 11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| fss130d 2 3 4 5 6 7 8 |
Intersil Corporation | 11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| fss130d1 2 3 4 5 6 7 8 |
INTERSIL CORP | 11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
| fss130d3 2 3 4 5 6 7 8 |
HARRIS SEMICONDUCTOR | 11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |