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參數(shù)資料
| 型號： | FSPJ264R4 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 43A I(D) | TO-254AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 250V五（巴西）直|第43A條（?。﹟對254AA |
| 文件頁數(shù)： | 8/9頁 |
| 文件大小： | 192K |
| 代理商： | FSPJ264R4 |
2001 Fairchild Semiconductor Corporation
FSPJ264R, FSPJ264F Rev. A2
TO-254AA
3 LEAD JEDEC TO-254AA HERMETIC METAL PACKAGE
D
L
Q
H
1
e
e
1
J
1
A
1
A
E
P
b
0.065 R MAX.
TYP.
1
2
3
SYMBOL
INCHES
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
A
0.249
0.260
6.33
6.60
-
A
1
b
0.040
0.050
1.02
1.27
-
0.035
0.045
0.89
1.14
2, 3
D
0.790
0.800
20.07
20.32
-
E
0.535
0.545
13.59
13.84
-
e
0.150 TYP
3.81 TYP
4
e
1
H
1
J
1
L
0.300 BSC
7.62 BSC
4
0.245
0.265
6.23
6.73
-
0.140
0.160
3.56
4.06
4
0.520
0.560
13.21
14.22
-
P
0.139
0.149
3.54
3.78
-
Q
0.110
0.130
2.80
3.30
-
NOTES:
1. These dimensions are within allowable dimensions of Rev. A of
JEDEC outline TO-254AA dated 11-86.
2. Add typically 0.002 inches (0.05mm) for solder coating.
3. Lead dimension (without solder).
4. Position of lead to be measured 0.250 inches (6.35mm) from bottom
of dimension D.
5. Die to base BeO isolated, terminals to case ceramic isolated.
6. Controlling dimension: Inch.
7. Revision 1 dated 1-93.
FSPJ264R, FSPJ264F
WARNING!
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllium oxide (BeO) shall not be ground, machined, sandblasted, or subject to any mechanical
operation which will produce dust containing any beryllium compound. Packages containing any beryllium compound shall not
be subjected to any chemical process (etching, etc.) which will produce fumes containing beryllium or its’ compounds.
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