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| 型號(hào)： | FSPJ264R4 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 43A I(D) | TO-254AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 250V五（巴西）直|第43A條（?。﹟對(duì)254AA |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 192K |
| 代理商： | FSPJ264R4 |
2001 Fairchild Semiconductor Corporation
FSPJ264R, FSPJ264F Rev. A2
Source to Drain Diode Specifications
PARAMETER
SYMBOL
V
SD
t
rr
Q
RR
TEST CONDITIONS
MIN
-
-
-
TYP
-
-
6.8
MAX
1.2
590
-
UNITS
V
ns
μ
C
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
= 43A
I
SD
= 43A, dI
SD
/dt = 100A/
μ
s
Electrical Specifications up to 300K RAD
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
TEST CONDITIONS
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
30V, V
DS
= 0V
V
GS
= 0, V
DS
= 200V
V
GS
= 12V, I
D
= 43A
V
GS
= 12V, I
D
= 27A
MIN
100K RAD
250
2.0
-
-
-
-
MAX
MIN
300K RAD
250
1.5
-
-
-
-
MAX
UNITS
V
V
nA
μ
A
V
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate to Body Leakage
Zero Gate Leakage
Drain to Source On-State Volts
Drain to Source On Resistance
NOTES:
1. Pulse test, 300
μ
s Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
(Note 3)
(Note 3)
(Notes 2, 3)
(Note 3)
(Notes 1, 3)
(Notes 1, 3)
-
-
4.5
100
25
2.15
0.047
4.5
100
50
2.62
0.056
Single Event Effects (SEB, SEGR)
Note 4
TEST
SYMBOL
SEESOA
ENVIRONMENT
(NOTE 5)
(NOTE 6)
TYPICAL LET
(MeV/mg/cm)
37
37
60
60
82
82
APPLIED
V
GS
BIAS
(V)
-10
-15
-2
-8
0
-5
(NOTE 7)
MAXIMUM
V
DS
BIAS (V)
250
200
200
150
150
100
TYPICAL RANGE (
μ
)
36
36
32
32
28
28
Single Event Effects Safe Operating Area
NOTES:
4. Testing conducted at Brookhaven National Labs or Texas A&M.
5. Fluence = 1E5 ions/cm
2
(typical), T = 25
o
C.
6. Ion Species: LET = 37, Br or Kr; LET = 60, I or Xe; LET = 82, Au
7. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Performance Curves
Unless Otherwise Specified
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. TYPICAL SEE SIGNATURE CURVE
120
80
40
0
0
-20
160
LET = 60MeV/mg/cm
2
, RANGE = 32
μ
LET = 82MeV/mg/cm
2
, RANGE = 28
μ
LET = 37MeV/mg/cm
2
, RANGE = 36
μ
V
D
200
240
-4
-8
-12
-16
V
GS
(V)
TEMP = 25
o
C
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
280
V
D
LET = 82 GOLD
LET = 60 IODINE
240
200
160
120
80
40
0
-30
0
-5
-10
-15
-20
-25
V
GS
(V)
280
LET = 37 BROMINE
FSPJ264R, FSPJ264F
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