參數(shù)資料
型號： FQPF6N40CF
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 400V N-Channel MOSFET
中文描述： 6 A, 400 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220F, 3 PIN
文件頁數(shù)： 2/10頁
文件大?。?/td> 1080K
代理商： FQPF6N40CF
2
www.fairchildsemi.com
FQP6N40CF/FQPF6N40CF Rev. B
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 13.7mH, I
AS
= 6A, V
DD
= 50V, R
G
= 25
,
Starting T
J
= 25°C
3. I
SD
≤
6A, di/dt
≤
200A/
μ
s, V
DD
≤
BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300
μ
s, Duty cycle
≤
2%
5. Essentially independent of operating temperature
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQP6N40CF
FQP6N40CF
TO-220
-
-
50
FQPF6N40CF
FQPF6N40CF
TO-220F
-
-
50
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
DSS
BV
DSS
/
T
J
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
μ
A
400
--
--
V
Breakdown Voltage Temperature
Coefficient
I
D
= 250
μ
A, Referenced to 25°C
--
0.54
--
V/°C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 400 V, V
GS
= 0 V
V
DS
= 320 V, T
C
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
--
--
1
μ
A
--
--
10
μ
A
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
--
--
100
nA
Gate-Body Leakage Current, Reverse
--
--
-100
nA
On Characteristics
V
GS(th)
R
DS(on)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
μ
A
2.0
--
4.0
V
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 3 A
--
0.9
1.1
g
FS
Forward Transconductance
V
DS
= 40 V, I
D
= 3 A
(Note 4)
--
4.7
--
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
480
625
pF
Output Capacitance
--
80
105
pF
Reverse Transfer Capacitance
--
15
20
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
V
DD
= 200 V, I
D
= 6 A,
R
G
= 25
(Note 4, 5)
--
13
35
ns
Turn-On Rise Time
--
65
140
ns
Turn-Off Delay Time
--
21
55
ns
Turn-Off Fall Time
--
38
85
ns
Total Gate Charge
V
DS
= 320 V, I
D
= 6 A,
V
GS
= 10 V
(Note 4, 5)
--
16
20
nC
Gate-Source Charge
--
2.3
--
nC
Gate-Drain Charge
--
8.2
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Maximum Continuous Drain-Source Diode Forward Current
--
--
6
A
Maximum Pulsed Drain-Source Diode Forward Current
--
--
24
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 6 A
V
GS
= 0 V, I
S
= 6 A,
dI
F
/ dt = 100 A/
μ
s
(Note 4)
--
--
1.4
V
Reverse Recovery Time
--
70
--
ns
Q
rr
Reverse Recovery Charge
--
0.12
--
μ
C
相關(guān)PDF資料
PDF描述
FQPF6N50 500V N-Channel MOSFET
FQPF6N70 700V N-Channel MOSFET
FQPF6N90 900V N-Channel MOSFET
FQPF6N15 150V N-Channel MOSFET
FQPF6N25 250V N-Channel MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQPF6N40CF_12 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:400V N-Channel MOSFET
FQPF6N40CT 功能描述:MOSFET N-CH/400V/6A/QFET C-Series RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQPF6N45 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:450V N-Channel MOSFET
FQPF6N50 功能描述:MOSFET 500V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQPF6N60 功能描述:MOSFET 600V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*