參數(shù)資料
型號(hào)： FQPF6N40CF
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 400V N-Channel MOSFET
中文描述： 6 A, 400 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220F, 3 PIN
文件頁(yè)數(shù)： 1/10頁(yè)
文件大?。?/td> 1080K
代理商： FQPF6N40CF
2006 Fairchild Semiconductor Corporation
FQP6N40CF/FQPF6N40CF Rev. B
1
www.fairchildsemi.com
F
February 2006
FRFET
TM
FQP6N40CF/FQPF6N40CF
400V N-Channel MOSFET
Features
6A, 400V, R
DS(on)
= 1.1
@V
GS
= 10 V
Low gate charge ( typical 16nC)
Low Crss ( typical 15pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Fast recovery body diode (typical 70ns)
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, electronic lamp
ballasts based on half bridge topology.
Absolute Maximum Ratings
Thermal Characteristics
TO-220
FQP Series
G
S
D
TO-220F
FQPF Series
G
S
D
D
G
S
Symbol
Parameter
FQP6N40CF
FQPF6N40CF
Units
V
DSS
I
D
Drain-Source Voltage
400
V
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
6
6*
A
3.6
3.6*
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
24
24*
A
Gate-Source Voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
270
mJ
Avalanche Current
(Note 1)
6
A
Repetitive Avalanche Energy
(Note 1)
73
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation (T
C
= 25°C)
73
38
W
- Derate above 25°C
0.58
0.3
W/°C
T
J
, T
STG
Operating and Storage Temperature Range
-55 to +150
°C
T
L
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
300
°C
Symbol
Parameter
FQP6N40CF
FQPF6N40CF
Units
R
θ
JC
R
θ
CS
R
θ
JA
Thermal Resistance, Junction-to-Case
1.71
3.31
°C
/
W
Thermal Resistance, Case-to-Sink
0.5
--
°C
/
W
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C
/
W
* Drain current limited by maximum junction temperature
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQPF6N40CF_12 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:400V N-Channel MOSFET
FQPF6N40CT 功能描述:MOSFET N-CH/400V/6A/QFET C-Series RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQPF6N45 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:450V N-Channel MOSFET
FQPF6N50 功能描述:MOSFET 500V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQPF6N60 功能描述:MOSFET 600V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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