參數(shù)資料
型號(hào)： FQPF5N50CF
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： JFETs
英文描述： 500V N-Channel MOSFET
中文描述： 5 A, 500 V, 1.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220F, 3 PIN
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 657K
代理商： FQPF5N50CF
2005 Fairchild Semiconductor Corporation
FQPF5N50CF Rev. B
1
www.fairchildsemi.com
F
FRFET
TM
FQPF5N50CF
500V N-Channel MOSFET
Features
5A, 500V, R
DS(on)
= 1.55
@V
GS
= 10 V
Low gate charge ( typical 18nC)
Low Crss ( typical 15pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switched mode power supplies, active power factor cor-
rection, electronic lamp ballasts based on half bridge topology.
Absolute Maximum Ratings
Thermal Characteristics
●
●
●
●
●
▲
!
S
!
!
!
D
G
TO-220F
FQPF Series
G
S
D
Symbol
Parameter
FQPF5N50CF
Units
V
DSS
Drain-Source Voltage
500
V
I
D
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
5
A
2.9
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
20
A
Gate-Source Voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
300
mJ
Avalanche Current
(Note 1)
5
A
Repetitive Avalanche Energy
(Note 1)
7.3
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation (T
C
= 25°C)
38
W
- Derate above 25°C
0.3
W/°C
T
J
, T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°C
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
300
°C
Symbol
Parameter
FQPF5N50CF
Units
R
θ
JC
R
θ
JS
R
θ
JA
Thermal Resistance, Junction-to-Case
3.31
°C
/
W
Thermal Resistance, Case-to-Sink Typ.
--
°C
/
W
Thermal Resistance, Junction-to-Ambient
62.5
°C
/
W
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQPF5N50CFTU 功能描述:MOSFET N-CH/500V/5A/QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQPF5N50CT 功能描述:MOSFET N-CH/500V/5A/QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQPF5N50CTTU 功能描述:MOSFET N-CH 500V 5A TO-220F RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:QFET™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
FQPF5N50CYDTU 功能描述:MOSFET 500V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQPF5N60 功能描述:MOSFET 600V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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