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參數資料
| 型號： | FP40R12KE3G |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Automotive Low-Cost Non-Volatile FPGA Family; Voltage: 1.2V; Grade: -5; Package: Lead-Free ftBGA; Pins: 256; Temperature: AUTO; LUTs (k): 17 |
| 中文描述： | 55 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MODULE-35 |
| 文件頁數： | 1/11頁 |
| 文件大?。?/td> | 162K |
| 代理商： | FP40R12KE3G |
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FP40R12KE3G
Vorlufige Daten
Preliminary data
Elektrische Eigenschaften / Electrical properties
Hchstzulssige Werte / Maximum rated values
Diode Gleichrichter/ Diode Rectifier
Periodische Rückw. Spitzensperrspannung
repetitive peak reverse voltage
V
RRM
1600
V
Gleichrichter Ausgang Grenzeffektivstrom
maximum RMS current at Rectifier output
I
RMSmax
t.b.d.
A
Dauergleichstrom
DC forward current
Stostrom Grenzwert
surge forward current
Grenzlastintegral
I
2
t - value
T
C
= 80°C
I
d
40
A
t
P
= 10 ms, T
vj
= 25°C
t
P
= 10 ms, T
vj
= 150°C
t
P
= 10 ms, T
vj
= 25°C
t
P
= 10 ms, T
vj
= 150°C
I
FSM
315
260
500
340
A
A
I
2
t
A
2
s
A
2
s
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
V
CES
1200
V
Kollektor-Dauergleichstrom
DC-collector current
Tc = 80 °C
T
C
= 25 °C
I
C,nom.
I
C
40
55
A
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t
P
= 1 ms, T
C
=
80 °C
I
CRM
80
A
Gesamt-Verlustleistung
total power dissipation
T
C
= 25°C
P
tot
200
W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
GES
+/- 20V
V
Diode Wechselrichter/ Diode Inverter
Dauergleichstrom
DC forward current
Tc = 80 °C
I
F
40
A
Periodischer Spitzenstrom t
repetitive peak forw. current
P
= 1 ms
I
FRM
80
A
Grenzlastintegral
I
2
t - value
V
R
= 0V, t
p
= 10ms, T
vj
= 125°C
I
2
t
320
A
2
s
Transistor Brems-Chopper/ Transistor Brake-Chopper
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
V
CES
1200
V
Kollektor-Dauergleichstrom
DC-collector current
T
C
= 80 °C
T
C
= 25 °C
I
C,nom.
I
C
40
55
A
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
t
P
= 1 ms, T
C
= 80°C
I
CRM
80
A
T
C
= 25°C
P
tot
200
W
V
GES
+/- 20V
V
Diode Brems-Chopper/ Diode Brake-Chopper
Dauergleichstrom
DC forward current
Tc = 80 °C
I
F
15
A
Periodischer Spitzenstrom t
repetitive peak forw. current
P
= 1 ms
I
FRM
30
A
prepared by: Andreas Schulz
date of publication:06.03.2001
approved by: Hornkamp
revision: 1
1(11)
DB-PIM-IGBT3_1.xls
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FP40R12KE3GV1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IGBT Module |
| FP40R12KE3V1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IGBT Module |
| FP40R12KT3 | 功能描述:IGBT 模塊 N-CH 1.2KV 55A RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FP40R12KT3G | 功能描述:IGBT 模塊 N-CH 1.2KV 55A RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FP410 | 功能描述:鉗型萬用表及配件 FUSE,11A/1000V RoHS:否 制造商:Fluke 準確性:2 % 測距:400 A |
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