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參數(shù)資料
| 型號： | FMS7G20US60 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | SWTCH PLUNGR SPDT 25A SCREW TERM |
| 中文描述： | 20 A, 600 V, N-CHANNEL IGBT |
| 封裝： | 25PM-AA, 25 PIN |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 902K |
| 代理商： | FMS7G20US60 |
2003 Fairchild Semiconductor Corporation
FMS7G20US60 Rev. A
F
Electrical Characteristics of IGBT
@ Inverter & Brake
T
C
= 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
Collector-Emitter Breakdown Voltage
B
VCES
/
T
J
Voltage
I
CES
Collector Cut-Off Current
I
GES
Gate - Emitter Leakage Current
V
GE
= 0V, I
C
= 250uA
600
--
--
V
Temperature Coeff. of Breakdown
V
GE
= 0V, I
C
= 1mA
--
0.6
--
V/
°
C
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
--
--
--
--
250
± 100
uA
nA
On Characteristics
V
GE(th)
Gate - Emitter Threshold Voltage
V
CE(sat)
Collector to Emitter Saturation Voltage
I
C
= 20mA, V
CE
= V
GE
I
C
= 20A
,
V
GE
= 15V
5.0
--
6.5
2.1
8.5
2.7
V
V
Dynamic Characteristics
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
--
--
1277
98
21
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
V
CC
= 300 V, I
C
= 20A,
R
G
= 10
, V
GE
= 15V,
Inductive Load, T
C
= 25
°
C
--
--
--
--
--
--
--
--
--
--
--
--
65
100
80
100
0.45
0.42
70
100
110
210
0.5
0.72
130
200
160
200
--
--
140
200
220
350
--
--
ns
ns
ns
ns
mJ
mJ
ns
ns
ns
ns
mJ
mJ
V
CC
= 300 V, I
C
= 20A,
R
G
= 10
, V
GE
= 15V,
Inductive Load, T
C
= 125
°
C
T
sc
Short Circuit Withstand Time
V
CC
= 300 V, V
GE
= 15V
@
T
C
= 100
°
C
10
--
--
us
Q
g
Q
ge
Q
gc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CE
= 300 V, I
C
= 20A,
V
GE
= 15V
--
--
--
55
10
20
65
15
30
nC
nC
nC
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