參數(shù)資料
型號: FMS6690MTC20
廠商: Fairchild Semiconductor
文件頁數(shù): 2/11頁
文件大?。?/td> 0K
描述: IC FILTER LCVF SD/PS/HD 20TSSOP
標(biāo)準(zhǔn)包裝: 73
類型: 視頻濾波器
應(yīng)用: 錄音機(jī),機(jī)頂盒
安裝類型: 表面貼裝
封裝/外殼: 20-TSSOP(0.173",4.40mm 寬)
供應(yīng)商設(shè)備封裝: 20-TSSOP
包裝: 管件
2006 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FMS6690 Rev. 1.0.3
10
FM
S6690
Six
C
h
annel,
6
th
Order,
SD/PS/HD
Video
Filt
er
Driver
Layout Considerations
Layout and supply bypassing play major roles in high-
frequency performance and thermal characteristics.
Fairchild
offers
a
demonstration
board,
FMS6690DEMO, to use as a guide for layout and to aid
in
device
testing
and
characterization.
The
FMS6690DEMO is a four-layer board with a full power
and ground plane. Following this layout configuration
provides the optimum performance and thermal
characteristics. For optimum results, follow these steps
as a basis for high-frequency layout:
Include 10F and 0.1μF ceramic bypass
capacitors.
Place the 10μF capacitor within 0.75 inches of the
power pin.
Place the 0.1μF capacitor within 0.1 inches of the
power pin.
For multi-layer boards, use a large ground plane to
help dissipate heat.
For 2 layer boards, use a ground plane that
extends beyond the device by at least 0.5.
Minimize all trace lengths to reduce series
inductances.
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FMS6690MTC20X 功能描述:視頻 IC Ang fg 6Chnl6thOrd SD/PS/HD VidFltrDrvr RoHS:否 制造商:Fairchild Semiconductor 工作電源電壓:5 V 電源電流:80 mA 最大工作溫度:+ 85 C 封裝 / 箱體:TSSOP-28 封裝:Reel
FMS6G10US60 功能描述:IGBT 模塊 600V 10A MODULE RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FMS6G10US60S 功能描述:IGBT 模塊 600V 10A MODULE RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FMS6G15US60 功能描述:IGBT 模塊 600V 15A MODULE RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FMS6G15US60S 功能描述:IGBT 模塊 600V 15A MODULE RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: