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參數(shù)資料
| 型號(hào)： | FML9 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | General purpose transistor (isolated transistor and diode) |
| 中文描述： | 通用晶體管（孤立的晶體管和二極管） |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大小： | 87K |
| 代理商： | FML9 |
FML9
Transistors
3/4
!
Electrical characteristic curves
Tr1
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
Fig.1
DC current gain vs.
collector current
10
D
F
1000
100
Ta
=
100
°
C
Ta
=
40
°
C
Ta
=
25
°
C
V
CE
=
2V
Pulsed
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
Fig.2
Base-emitter saturation voltage
vs. collector current
0.001
0.01
10
0.1
1
I
C
/I
B
=
20/1
V
CE
=
2V
Pulsed
Ta
=
100
°
C
Ta
=
100
°
C
Ta
=
40
°
C
Ta
=
40
°
C
V
BE
(sat)
V
CE
(sat)
Ta
=
25
°
C
Ta
=
25
°
C
B
B
(
C
C
(
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
Fig.3
Collector-emitter saturation voltage
vs. collector current
0.001
C
C
(
0.01
0.1
1
Ta
=
25
°
C
Pulsed
I
C
/I
B
=
10/1
I
C
/I
B
=
20/1
I
C
/I
B
=
50/1
0
0.5
1
1.5
BASE TO EMITTER CURRENT : V
BE(on)
(V)
Fig.4
Grounded emitter propagation
characteristics
0.001
C
C
(
0.01
10
0.1
1
V
CE
=
2V
Pulsed
Ta
=
100
°
C
Ta
=
40
°
C
Ta
=
25
°
C
0.001
0.01
0.1
1
10
EMITTER CURRENT : I
E
(A)
Fig.5
Gain bandwidth product
vs. emitter current
T
T
(
1000
100
Ta
=
25
°
C
V
CE
=
2V
f
=
100MHz
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
Fig.6 Switching time
10
10000
100
1000
Ta
=
25
°
C
V
CE
=
5V
f
=
100MHz
tstg
tdon
tf
tr
S
1
10
100
0.1
10
100
1000
f
=
1MHz
I
E
=
0mA
Ta
=
25C
C
E
Fig.7
Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Cib
Cob
EMITTER TO BASE VOLTAGE : V
EB
(
V)
COLLECTOR TO BASE VOLTAGE : V
CB
(
V)
0.01
0.1
1
10
100
Fig.8
Safe operation area
0.01
0.1
1
10
Ta
=
25
°
C
Single Pulsed
DC Operation
PW=100ms
10ms
1ms
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
C
C
(
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|---|---|
| FML9_1 | 制造商:ROHM 制造商全稱(chēng):Rohm 功能描述:General purpose transistor (isolated transistor and diode) |
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