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參數(shù)資料
| 型號： | FML9 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | General purpose transistor (isolated transistor and diode) |
| 中文描述： | 通用晶體管（孤立的晶體管和二極管） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 87K |
| 代理商： | FML9 |
FML9
Transistors
2/4
!
Absolute maximum ratings
(Ta=25
°
C)
Tr1
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pc
Tj
Tstg
Limits
15
12
6
1.5
3
200
150
40~
+
125
2
1
Unit
V
V
V
A
A
mW
°
C
°
C
1
Single pulse, Pw=1ms.
2
Each terminal mounted on a recommended land.
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Di2
Parameter
Symbol
I
F
I
FSM
V
R
Tj
Tstg
Limits
700
3
20
125
40~
+
125
Unit
mA
A
V
°
C
°
C
Average rectified forward current
F
orward current surge peak (60H
Z
,
1
∞
)
Reverse voltage (DC)
Junction temperature
Range of storage temperature
!
Electrical characteristics
(Ta=25
°
C)
Tr1
Parameter
Transition frequency
Collector output capacitance
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
Min.
12
15
6
270
Typ.
110
Max.
100
100
200
680
Unit
V
V
V
nA
nA
mV
Conditions
V
CB
=
10V, I
E
=
0mA, f
=
1MHz
f
T
400
12
MHz
pF
V
CE
=
2V, I
E
=
200mA, f
=
100MHz
I
C
=
1mA
I
C
=
10
μ
A
I
E
=
10
μ
A
V
CB
=
15V
V
EB
=
6V
I
C
=
500mA, I
B
=
25mA
V
CE
=
2V, I
C
=
200mA
Cob
Di2
Parameter
Min.
Typ.
Max.
490
200
Unit
mV
μ
A
Conditions
I
F
=700mA
V
R
=20V
Symbol
V
F
I
R
Forward voltage
Reverse current
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|---|---|
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