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參數(shù)資料
| 型號： | FML10 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | General purpose transistor (isolated transistor and diode) |
| 中文描述： | 通用晶體管（孤立的晶體管和二極管） |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 78K |
| 代理商： | FML10 |
FML10
Transistors
z
Electrical characteristic curves
Tr1
Rev.B
3/4
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
Fig.1 DC current gain
vs. collector current
10
D
F
100
1000
Ta
=
25
°
C
Ta
=
40
°
C
Ta
=
100
°
C
V
CE
2V
Pulsed
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
0.001
B
B
(
C
C
(
0.1
0.01
10
1
Ta
=
25
°
C
Ta
=
100
°
C
Ta
=
25
°
C
Ta
=
40
°
C
Ta
=
40
°
C
Ta
=
100
°
C
V
BE(sat)
V
CE(sat)
I
C
B
=
Pulsed
I
C
/I
B
=
20/1
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
Fig.3 Collector-emitter saturation voltage
vs. collector current
0.0.001
C
C
(
0.01
0.1
1
Ta
=
25
°
C
V
CE
=
2V
I
C
/I
B
=
50/1
I
C
/I
B
=
20/1
I
C
/I
B
=
10/1
0
0.001
0.01
0.1
1
10
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.4 Grounded emitter propagation
characteristics
C
C
(
1.5
1.0
0.5
V
CE
=
2V
Pulsed
Ta
=
25
°
C
Ta
=
40
°
C
Ta
=
100
°
C
0.001
0.01
EMITTER CURRENT : I
E
(A)
0.1
1
10
Fig.5 Gain bandwidth product
vs. emitter current
10
T
T
100
1000
V
CE
=
2V
Ta
=
25
°
C
Pulsed
01
0.01
0.1
1
COLLECTOR CURRENT : I
C
(A)
Fig.6 Switching time
S
10
100
1000
IC=20 IB1=-20IB2
Ta
=
25
°
C
f
=
100MHz
tstg
tdon
tr
tf
0.1
1
10
100
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
1
E
C
10
100
Cib
Cob
I
E
=
0A
f
=
1MHz
Ta
=
25
°
C
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