參數(shù)資料
型號： FML10
廠商： Rohm CO.,LTD.
英文描述： General purpose transistor (isolated transistor and diode)
中文描述： 通用晶體管（孤立的晶體管和二極管）
文件頁數(shù)： 2/5頁
文件大?。?/td> 78K
代理商： FML10
FML10
Transistors
z
Absolute maximum ratings
(Ta=25
°
C)
Tr1
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Rev.B
2/4
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Unit
V
V
V
A
A
mW
°
C
°
C
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Single pulse, P
W
=
1ms
Di2
Parameter
Reak reverse voltage
Average rectified forward current
Limits
15
12
6
1.5
3
200
150
40 to
+
125
Symbol
V
RM
I
F
I
FSM
V
R
Tj
Tstg
Limits
25
700
3
20
125
Unit
V
mA
A
V
°
C
°
C
40 to
+
125
Junction temperature
Range of storage temperature
Reverse voltage (DC)
F
orward current surge peak (60H
Z
,
1
∞
)
z
Electrical characteristics
(Ta=25
°
C)
Tr1
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Pulsed
Di2
Parameter
Forward voltage
Reverse current
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
15
12
6
270
Typ. Max.
85
400
12
Unit
V
V
V
nA
nA
mV
MHz V
CE
=
2V, I
E
=
200mA, f
=
100MHz
pF
V
CB
=
10V, I
E
=
0A, f
=
1MHz
Conditions
I
C
=
10
μ
A
I
C
=
1mA
I
E
=
10
μ
A
V
CB
=
15V
V
EB
=
6V
I
C
/I
B
=
500mA/25mA
V
CE
/I
C
=
2V/200mA
100
100
200
680
Symbol
V
F
I
R
Min.
Typ.
Max.
490
200
Unit
mV
μ
A
Conditions
I
F
=
700mA
V
R
=
20V
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