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參數(shù)資料
| 型號： | FMBSA06 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN General Purpose Amplifier |
| 中文描述： | 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SUPERSOT-6, 6 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 97K |
| 代理商： | FMBSA06 |
2004 Fairchild Semiconductor Corporation
Rev. A1, November 2004
F
Typical Characteristics
Figure 1. Typical Pulsed Current Gain
vs Collector Current
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
Figure 4. Base-Emitter On Voltage
vs Collector Current
Figure 5. Collector Cutoff Current
vs Ambient Temperature
Figure 6. Collector Saturation Region
vs Collector Current
0.001
0.01
0.1
50
100
150
200
I - COLLECTOR CURRENT (A)
h
F
- 40 °C
25 °C
V = 1V
125 °C
Collector-Emitter Saturation
Voltage vs Collector Current
0.1
1
10
100
1000
0
0.1
0.2
0.3
0.4
0.5
I - COLLECTOR CURRENT (mA)
V
C
β
= 10
- 40
°
C
25
°
C
125
°
C
Voltage vs Collector Current
0.1
1
10
100
1000
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
B
β
= 10
- 40
°
C
25
°
C
125
°
C
β
Collector Current
1
10
100
1000
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
B
V = 5V
- 40
°
C
25
°
C
125
°
C
β
25
50
75
100
125
0.001
0.01
0.1
1
10
T - AMBIENT TEMPERATURE ( C)
I
C
V = 80 V
Collector Saturation Region
4000
10000
20000
30000
50000
0
0.5
1
1.5
2
I - BASE CURRENT (uA)
V
10 mA
100 mA
1 mA
TA
°
C
I =
C
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