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參數(shù)資料
| 型號： | FMBSA56 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP General Purpose Amplifier |
| 中文描述： | 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SUPERSOT-6, 6 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 87K |
| 代理商： | FMBSA56 |
2004 Fairchild Semiconductor Corporation
Rev. A1, November 2004
F
E
C1
NC
C
C
B
SuperSOT
TM
-6 single
Mark: .2G1
pin #1
Absolute Maximum Ratings*
T
a
=25
°
C
unless otherwise noted
Symbol
V
CEO
Collector-Emitter Voltage
V
CBO
Collector-Base Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current
T
J
, T
STG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
Symbol
Parameter
Off Characteristics
V
(BR)CEO
Collector-Emitter Sustaining Voltage *
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CEO
Collector Cut-off Current
I
CBO
Collector Cut-off Current
On Characteristics
h
FE
DC Current Gain
* Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
Thermal Characteristics
T
a
=25
°
C unless otherwise noted
Symbol
P
D
Total Device Dissipation *
R
θ
JA
Thermal Resistance, Junction to Ambient, total
* Device mounted on a 1 in 2 pad of 2 oz copper.
Parameter
Value
-80
-80
-4.0
-500
- 55 ~ 150
Units
V
V
V
mA
°
C
- Continuous
Test Condition
Min.
Max.
Units
I
C
= -1.0mA, I
B
= 0
I
C
= -100
μ
A, I
E
= 0
I
E
= -100
μ
A, I
C
= 0
V
CE
= -60V, I
B
= 0
V
CB
= -80V, I
E
= 0
-80
-80
-4.0
V
V
μ
A
μ
A
-0.1
-0.1
I
C
= -10mA, V
CE
= -1.0V
I
C
= -100mA, V
CE
= -1.0V
I
C
= -100mA, I
B
= -10mA
I
C
= -100mA, V
CE
= -1.0V
100
100
V
CE(sat)
V
BE(on)
Small Signal Characteristics
f
T
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
-0.25
-1.2
V
V
Current Gain Bandwidth Product
I
C
= -10mA, V
CE
= -2.0V,
f = 100MHz
50
MHz
Parameter
Max.
700
180
Units
mW
°
C/W
PNP General Purpose Amplifier
This device is designed for general purpose amplifier applications at
collector currents to 300 mA.
Sourced from Process 73.
FMBSA56
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