參數(shù)資料
型號(hào)： FMB-G19
廠商： Sanken Electric Co.,Ltd.
英文描述： Schottky Barrier Diodes 90V
中文描述： 90V的肖特基二極管
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 36K
代理商： FMB-G19
FMB-G19L
Tc —I
F(AV)
Derating
Schottky Barrier Diodes
90V
Parameter
Type No.
Absolute Maximum Ratings
I
(A)
Half-Single Shot
V
RM
(V)
I
F (AV)
V
F
(V)
I
F
(A)
I
/
I
RP
(mA)
Rth (j-c)
I
(mA)
V
R
=
V
RM
max per element
I
(H)
(mA)
t
rr
(ns)
Tj
(
°
C)
Tstg
(
°
C)
Electrical Characteristics (Ta
=
25
°
C)
(
°
C/W)
(g)
Mass
Others
FMB-G19L
4.0
90
8.0
60
50
60
0.81
4.0
2.0
4.0
5.0
3.0
5.0
35
1 Chip
15
35
100 100/100
–40 to +150
4.0
2.1
2.0
5.5
FMB-29
FMB-29L
FMB-39
FMB-39M
A
C
B
7.5
10.0
50
10.0
15.0
60
15.0
20.0
150
10
20
50
40
30
0 1
5
50
10
20ms
I
F
FMB-29
FMB-29L
Tc —I
F(AV)
Derating
50
10
1
0.1
0.010
0.5
1.0
1.5
50
10
1
0.1
0.01
0.001
0
20
Reverse Voltage V
R
(V)
40
100
80
60
50
10
1
0.1
0.01
0
20
Reverse Voltage V
R
(V)
40
100
80
60
50
10
1
0.1
0.001
0.01
10
20
30
40
60
50
0 1
5
50
10
20ms
I
F
80
0
90
Case Temperature Tc
(
°
C)
130
1
2
3
4
120
100
110
t/T=
t/T=
t/T 1/2
=
D.C.
Sinewave
T
a
=
100oC
60oC
27oC
25oC
100oC
T
a
=
60oC
50
10
1
0.1
0.010
0.5
1.0
1.5
0
0.5
1.0
1.5
10
1
0.1
0.01
0.001
0
20
Reverse Voltage V
R
(V)
40
100
80
60
T
a
=
100oC
60oC
26oC
25oC
100oC
T
a
=
60oC
T
a
125oC
=
100oC
60oC
26oC
100oC
T
a
=
60oC
25oC
V
R
=90V
10
20
30
40
60
50
0 1
5
50
10
20ms
I
F
0
60
70
120
130
2
4
6
8
90
80
100
110
t/T=
t/T=
D.C.
t/T=
Sinewave
t/T=
t/T=
D.C.
t/T=
Sinewave
0
80
110
130
1
2
3
4
120
90
Case Temperature Tc
(
°
C)
100
106
3.3
0
3
1.35
10.0
4
4
0.85
2.54
2.54
4.2
2.8
C 0.5
2.4
1
1
±
0
0.45
9.0
15.0
5
2
3
1
2
2
0
3.3
3.4
1.0
2.3
5.45
5.45
5.0
0.65
2.6
±
0
±
0
3.3
0
3
1.35
10.0
4
4
0.85
5.08
4.2
2.8
C 0.5
2.4
1
1
±
0
0.45
V
R
=V
RM,
Ta=100
°
C
max per element
Fig.
Center-tap
Remarks
max per
element
Forward Voltage V
F
(V)
F
F
(
V
F
—I
F
Characteristics
(Typical)
Overcurrent Cycles
I
FMS
Rating
P
F
(
R
R
(
V
R
—I
R
Characteristics
(Typical)
A
F
(
Forward Voltage V
F
(V)
F
F
(
V
F
—I
F
Characteristics
(Typical)
Overcurrent Cycles
I
FMS
Rating
P
F
(
R
R
(
V
R
—I
R
Characteristics
(Typical)
A
F
(
Tc —I
F(AV)
Derating
Forward Voltage V
F
(V)
F
F
(
V
F
—I
F
Characteristics
(Typical)
Overcurrent Cycles
I
FMS
Rating
P
F
(
R
R
(
V
R
—I
R
Characteristics
(Typical)
Case Temperature Tc
(
°
C)
A
F
(
External Dimensions
(Unit: mm) (Full-mold)
Flammability:
UL94V-0 or Equivalent
A
Fig.
B
Fig.
C
Fig.
+0.2
–0.1
+0.2
–0.1
+0.2
–0.1
相關(guān)PDF資料
PDF描述
FMB-G19L Schottky Barrier Diodes 90V
FMB-29L Schottky Barrier Diodes 90V
FMB-39M 90V, Schottky Barrier Diode(90V,肖特基勢(shì)壘二極管)
FMB-39 90V, Schottky Barrier Diode(90V,肖特基勢(shì)壘二極管)
FMB-G24 Schottky Barrier Diodes 40V
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FMB-G19L 制造商:Sanken Electric Co Ltd 功能描述:Bulk
FMB-G22H 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:Schottky Barrier Diodes 20V
FMB-G24 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:Schottky Barrier Diodes 40V
FMB-G24H 制造商:Sanken Electric Co Ltd 功能描述:Diode Schottky 40V 10A 2-Pin(2+Tab) TO-220F 制造商:Sanken Electric Co Ltd 功能描述:DIODE SCHOTTKY 40V TO220F-2
FMBH1G100US60 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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