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參數(shù)資料
| 型號： | FM580 |
| 廠商： | 美麗微半導體有限公司 |
| 英文描述： | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| 中文描述： | 肖特基二極管芯片-硅外延式龍門 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 80K |
| 代理商： | FM580 |
0.1
1.0
.01
10
50
RATING AND CHARACTERISTIC CURVES (FM520 THRU FM5100)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
INSTANTANEOUS FORWARD CURRENT,(A)
FORWARD VOLTAGE,(V)
Pulse Width 300us
1% Duty Cycle
1.0
2.0
3.0
4.0
5.0
6.0
.1 .3 .5 .7 .9 1.1 1.3 1.5
3.0
.1
1.0
10
100
FIG.5 - TYPICAL REVERSE
CHARACTERISTICS
REVERSE LEAKAGE CURRENT, (mA)
0 20 40 60 80 100 120 140
.01
Tj=75 C
FM520~FM540
FM550~FM5100
FM550~FM560
FM580~FM5100
FM520~FM540
Tj=25 C
Tj=25 C
AMBIENT TEMPERATURE,( C)
0
0
20
40
60
80
100
120
140
160
180
200
FIG.2-TYPICAL FORWARD
CHARACTERISTICS
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
FIG.4-TYPICAL JUNCTION CAPACITANCE
REVERSE VOLTAGE,(V)
JUNCTION CAPACITANCE,(pF)
1000
1200
1400
800
600
400
200
0
.01 .05 .1 .5 1 5 10 50 100
60
30
0
90
150
120
NUMBER OF CYCLES AT 60Hz
1
10
5
50
100
Tj=25 C
8.3ms Single Half
Sine Wave
JEDEC method
PEAK FORWARD SURGE CURRENT,(A)
相關PDF資料 |
PDF描述 |
|---|---|
| FM5100 | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM5819-L | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM5817-L | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM5818-L | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM5820-AL | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FM580-B | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM580L | 制造商:RECTRON 制造商全稱:Rectron Semiconductor 功能描述:SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 200 Volts CURRENT 5.0 Ampere |
| FM580-T | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM5817 | 功能描述:二極管 - 通用，功率，開關 SM Schot Bar Rect SMA,1A,20V RoHS:否 制造商:STMicroelectronics 產品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| FM5817_06 | 制造商:RECTRON 制造商全稱:Rectron Semiconductor 功能描述:SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere |
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