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參數(shù)資料
| 型號： | FM2G75US60 |
| 英文描述： | TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 75A I(C) |
| 中文描述： | 晶體管| IGBT功率模塊|半橋| 600V的五（巴西）國際消費電子展| 75A條一（c） |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 713K |
| 代理商： | FM2G75US60 |
2000 Fairchild Semiconductor International
FM2G75US60 Rev. A
F
20
30
40
50
60
70
75
100
1000
Toff
Tf
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 3.3
T
C
= 25
℃
T
C
= 125
℃
S
Collector Current, I
C
[A]
20
30
40
50
60
70
75
10
100
300
Ton
Tr
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 3.3
T
C
= 25
℃
T
C
= 125
℃
S
Collector Current, I
C
[A]
1
10
100
1000
10000
20000
Eoff
Eon
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 75A
T
C
= 25
℃
T
C
= 125
℃
S
Gate Resistance, Rg [
]
10
100
100
1000
Tf
Toff
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 75A
T
C
= 25
℃
T
C
= 125
℃
S
Gate Resistance, R
G
[
]
1
10
100
10
100
1000
Common Emitter
V
= 300V, V
GE
=
±
15V
I
C
= 75A
T
C
= 25
℃
T
C
= 125
℃
Ton
Tr
S
Gate Resistance, R
G
[
]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
1
10
0
2000
4000
6000
8000
10000
12000
14000
16000
Cres
Coes
Cies
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
℃
C
Collector - Emitter Voltage, V
CE
[V]
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