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參數(shù)資料
| 型號(hào)： | FM2G75US60 |
| 英文描述： | TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 75A I(C) |
| 中文描述： | 晶體管| IGBT功率模塊|半橋| 600V的五（巴西）國際消費(fèi)電子展| 75A條一（c） |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 713K |
| 代理商： | FM2G75US60 |
2000 Fairchild Semiconductor International
FM2G75US60 Rev. A
F
0
2
4
6
8
0
20
40
60
80
100
120
140
160
180
200
20V
12V
15V
Vge = 10V
Common Emitter
T
C
= 25
℃
C
Collector - Emitter Voltage, V
CE
[V]
0.3
1
10
20
0
40
80
120
160
200
Common Emitter
V
GE
= 15V
T
C
= 25
℃
T
C
= 125
℃
C
Collector - Emitter Voltage, V
CE
[V]
0
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 125
℃
150A
75A
Ic = 40A
C
Gate - Emitter Voltage, V
GE
[V]
0
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 25
℃
150A
75A
Ic = 40A
C
Gate - Emitter Voltage, V
GE
[V]
0
20
40
60
80
100
0.1
1
10
100
1000
Duty cycle : 50%
Tc = 100
℃
Power Dissipation = 100W
V
= 300V
Load Current : peak of square wave
Frequency [Khz]
L
0
30
60
90
120
150
0
1
2
3
4
5
150A
75A
I
C
= 40A
Common Emitter
V
GE
= 15V
C
Case Temperature, Tc [
℃
]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
Characteristics
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
Fig 5. Saturation Voltage vs. V
GE
Fig 6. Saturation Voltage vs. V
GE
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|---|---|
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