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參數(shù)資料
| 型號(hào)： | FM2G400US60 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Signal Generator; Bandwidth Max:10MHz; Sweep Rate Range:100:1 lin/log; Sweep Time Range:0.5 Sec to 30 Sec; Accuracy:20Hz to 100kHz ( 3%)<Linebreak/>; 120/150kHz ( 5%); Battery Size Code:9V; Frequency Max:5MHz; Frequency Min:0.2Hz |
| 中文描述： | 400 A, 600 V, N-CHANNEL IGBT |
| 封裝： | 7PM-AA, 7 PIN |
| 文件頁數(shù)： | 5/9頁 |
| 文件大小： | 464K |
| 代理商： | FM2G400US60 |
2001 Fairchild Semiconductor Corporation
FM2G400US60 Rev. A
F
30
100
0.01
0.1
1
400
Common Emitter
Vcc = 300V
Vge =
±
15V
Rg = 1.6
t
r
t
d(on)
: Tc = 25
℃
: Tc = 125
℃
S
d
r
COLLECTOR CURRENT Ic [A]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
1
10
30
1000
10000
100000
C res
C oes
C ies
C om m on E m itter
V ge = 0V
f = 1M hz
Tc = 25
℃
C
C O LLE C T O R -E M IT T E R V O LT A G E V
CE
[V ]
1
1 0
0 .3
1
t
r
t
d (o n)
: T c = 2 5
℃
: T c = 1 2 5
℃
C o m m o n E m itte r
V cc = 3 0 0 V
V g e =
±
Ic = 4 0 0 A
1 5 V
S
o
n
G A T E R E S IS T A N C E R g [
]
1
10
0.05
0.1
1
t
f
t
d(off)
: Tc = 25
℃
: Tc = 125
℃
Com m on Em itter
Vcc = 300V
Vge =
±
Ic = 400A
15V
S
o
f
G ATE R ESISTAN C E R
G
[
]
0
5
10
15
20
0
20
40
60
80
10 0
E o ff
E o n
E sw
V cc = 300 V
Ic = 400 A
G A T E - E M IT T E R R E S IS T A N C E R g [
]
40
100
0.05
0.1
1
400
t
f
t
d(off)
: Tc = 25
℃
: Tc = 125
℃
C om m on Em itter
Vcc = 300V
Vge =
±
R g = 1.6
15V
S
d
f
C O LLEC TO R C U RR EN T Ic [A]
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參數(shù)描述 |
|---|---|
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